SI1401EDH-T1-GE3

Mfr. #:: SI1401EDH-T1-GE3
निर्माता:: Vishay
विवरण:: MOSFET P-CH 12V 4A SC-70-6
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI1401EDH-T1-GE3 डाटा पाना
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थप जानकारी:: SI1401EDH-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - एकल

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI1401EDH-GE3

एकाइ - वजन: 0.000265 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 6-TSSOP, SC-88, SOT-363

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 1 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: SC-70-6 (SOT-363)

कन्फिगरेसन: एकल

FET-प्रकार: MOSFET P- च्यानल, धातु अक्साइड

पावर-अधिकतम: 2.8W

ट्रान्जिस्टर-प्रकार: 1 P-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 12V

इनपुट-Capacitance-Ciss-Vds: -

FET - सुविधा: मानक

वर्तमान-निरन्तर-नाली-Id-25°C: 4A (Tc)

Rds-on-max-Id-Vgs: 34 mOhm @ 5.5A, 4.5V

Vgs-th-max-Id: 1V @ 250μA

गेट-चार्ज-Qg-Vgs: 36nC @ 8V

Pd-शक्ति-डिसिपेशन: 2.8 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

Vgs-गेट-स्रोत-भोल्टेज: 10 V

आईडी-निरन्तर-नाली-वर्तमान: - 4 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: - 12 V

Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज: - 1 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 34 mOhms

ट्रान्जिस्टर-ध्रुवता: P- च्यानल

Qg-गेट-चार्ज: 24 nC

फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम: 16 S

Tags: SI1401E, SI1401, SI140, SI14, SI1

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1401EDH-T1-GE3 विवरण

***ure Electronics: Single P-Channel 12 V 34 mOhm 36 nC Surface Mount Mosfet - SOT-363 (SC-70)

***ical: Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R

***nell: MOSFET, P CH, -12V, -4A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:-1.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-

SI1401EDH-T1-GE3 थप जानकारी

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI1401EDH-T1-GE3 DISTI # V72:2272_07433774	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R RoHS: Compliant	122	100:$0.2233 25:$0.2693 10:$0.2993 1:$0.4084
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	164In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	164In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1535
SI1401EDH-T1-GE3 DISTI # C1S803603683595	Vishay Intertechnologies	MOSFETs RoHS: Compliant	122	100:$0.2233 25:$0.2693 10:$0.2993
SI1401EDH-T1-GE3 DISTI # 25778419	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R RoHS: Compliant	122	100:$0.2233 51:$0.2693
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R (Alt: SI1401EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3089 6000:€0.2109 12000:€0.1809 18000:€0.1669 30000:€0.1559
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1401EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1309 6000:$0.1269 12000:$0.1209 18000:$0.1179 30000:$0.1149
SI1401EDH-T1-GE3 DISTI # 97W2622	Vishay Intertechnologies	MOSFET Transistor, P Channel, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV , RoHS Compliant: Yes	0	1:$0.4300 10:$0.3250 25:$0.2970 50:$0.2700 100:$0.2420 500:$0.1990 1000:$0.1540
SI1401EDH-T1-GE3 DISTI # 86R3831	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.1340 3000:$0.1330 6000:$0.1260 12000:$0.1120
SI1401EDH-T1-GE3 DISTI # 69W7175	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$0.6040 25:$0.5300 50:$0.4640 100:$0.3870 250:$0.3240 500:$0.2720 1000:$0.2320 2500:$0.1890
SI1401EDH-T1-GE3 DISTI # 781-SI1401EDH-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs SC70-6 RoHS: Compliant	1112	1:$0.4300 10:$0.3250 100:$0.2420 500:$0.1990 1000:$0.1540 3000:$0.1400 6000:$0.1310
SI1401EDH-T1-GE3 DISTI # 2335277	Vishay Intertechnologies	MOSFET, P CH, -12V, -4A, SOT-363 RoHS: Compliant	0	1:$0.6810 10:$0.5150 100:$0.3840 500:$0.3150 1000:$0.2440 3000:$0.2220 6000:$0.2110
SI1401EDH-T1-GE3 DISTI # 2459404	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6 RoHS: Compliant	0	1:$0.6810 10:$0.5150 100:$0.3840 500:$0.3150 1000:$0.2440 3000:$0.2220 6000:$0.2070
SI1401EDH-T1-GE3 DISTI # 2335277	Vishay Intertechnologies	MOSFET, P CH, -12V, -4A, SOT-363 RoHS: Compliant	0	5:£0.2830 25:£0.2710 100:£0.1850 250:£0.1690 500:£0.1520
SI1401EDH-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs SC70-6 RoHS: Compliant	Americas - 36000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI1401EDH-T1-GE3 OMO.#: OMO-SI1401EDH-T1-GE3	MOSFET -12V Vds 10V Vgs SC70-6
	Mfr.#: SI1401EDH-T1-GE OMO.#: OMO-SI1401EDH-T1-GE-1190	नयाँ र मौलिक
	Mfr.#: SI1401EDH-T1-GE3 OMO.#: OMO-SI1401EDH-T1-GE3-VISHAY	MOSFET P-CH 12V 4A SC-70-6
	Mfr.#: SI1401EDH-T1-GE3-CUT TAPE OMO.#: OMO-SI1401EDH-T1-GE3-CUT-TAPE-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 2500
मात्रा प्रविष्ट गर्नुहोस्:

SI1401EDH-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.१७~~; ~~US$ ०.१७~~

10: ~~US$ ०.१६~~; ~~US$ १.६४~~

100: ~~US$ ०.१६~~; ~~US$ १५.५१~~

500: ~~US$ ०.१५~~; ~~US$ ७३.२५~~

1000: ~~US$ ०.१४~~; ~~US$ १३७.९०~~

बाट सुरु गर्नुहोस्

SI1401E 3
SI1401 4
SI140 47
SI14 148
SI1 1080

SI1401EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes