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SI7230DN-T1-GE3

SI7230DN-T1-GE3
Mfr. #:
SI7230DN-T1-GE3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 30V 14A 3.7W 12mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7230DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI7230DN-GE3
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAK-1212-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
1.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
9 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
12 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
SI7230DN-T, SI7230DN, SI7230D, SI7230, SI723, Si72, SI7
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 T/R
***ure Electronics
MOSFET 30V 14A 3.7W 12mohm @ 10V
***nell
N CHANNEL MOSFET, 30V, 14A POWERPAK, FUL
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:14000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI7230DN-T1-GE3
DISTI # SI7230DN-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 9A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.6468
SI7230DN-T1-GE3
DISTI # SI7230DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7230DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6109
  • 6000:$0.5929
  • 12000:$0.5689
  • 18000:$0.5529
  • 30000:$0.5379
SI7230DN-T1-GE3
DISTI # 16P3836		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 14A POWERPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$0.5880
  • 3000:$0.5740
  • 6000:$0.5590
  • 12000:$0.5380
SI7230DN-T1-GE3
DISTI # 781-SI7230DN-GE3		Vishay IntertechnologiesMOSFET 30V 14A 3.7W 12mohm @ 10V
RoHS: Compliant		0
  • 1:$1.4700
  • 10:$1.2100
  • 100:$0.9290
  • 500:$0.7990
  • 1000:$0.6300
  • 3000:$0.5880
  • 6000:$0.5590
  • 9000:$0.5380
SI7230DN-T1-GE3
DISTI # 2478969		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 14A POWERPAK, FULL REEL
RoHS: Compliant		0
  • 3000:$1.0400
SI7230DN-T1-GE3
DISTI # 2478969		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 14A POWERPAK, FUL
RoHS: Compliant		0
  • 3000:£0.6920
  • 6000:£0.5730
छवि भाग # विवरण
SI7230DN-T1-GE3

Mfr.#: SI7230DN-T1-GE3

OMO.#: OMO-SI7230DN-T1-GE3

 MOSFET 30V 14A 3.7W 12mohm @ 10V
SI7230DN-T1-E3

Mfr.#: SI7230DN-T1-E3

OMO.#: OMO-SI7230DN-T1-E3

 MOSFET 30V 14A 1.5W
SI7230DN-T1-E3

Mfr.#: SI7230DN-T1-E3

OMO.#: OMO-SI7230DN-T1-E3-VISHAY

 RF Bipolar Transistors MOSFET 30V 14A 1.5W
SI7230DN-T1-GE3

Mfr.#: SI7230DN-T1-GE3

OMO.#: OMO-SI7230DN-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 30V 14A 3.7W 12mohm @ 10V
SI7230DN

Mfr.#: SI7230DN

OMO.#: OMO-SI7230DN-1190

 नयाँ र मौलिक
SI7230DN-T1-E3/////////

Mfr.#: SI7230DN-T1-E3/////////

OMO.#: OMO-SI7230DN-T1-E3--1190

 नयाँ र मौलिक
SI7230DP-T1-E3

Mfr.#: SI7230DP-T1-E3

OMO.#: OMO-SI7230DP-T1-E3-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
SI7230DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.८१
US$ ०.८१
10
US$ ०.७७
US$ ७.६६
100
US$ ०.७३
US$ ७२.६२
500
US$ ०.६९
US$ ३४२.९०
1000
US$ ०.६५
US$ ६४५.५०
बाट सुरु गर्नुहोस्
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