IRFW520ATM

IRFW520ATM
Mfr. #:
IRFW520ATM
निर्माता:
Rochester Electronics, LLC
विवरण:
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRFW520ATM डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
IRFW5, IRFW, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
MOSFETs 100V N-Channel A-FET
***i-Key
N-CHANNEL POWER MOSFET
***icroelectronics
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
***et
Trans MOSFET N-CH 525V 10A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 525V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ser
MOSFETs N-Ch/600V/7a/1.2Ohm
***i-Key
N-CHANNEL POWER MOSFET
भाग # Mfg। विवरण स्टक मूल्य
IRFW520ATMFairchild Semiconductor CorporationPower Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
774
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
छवि भाग # विवरण
IRFW510ATM

Mfr.#: IRFW510ATM

OMO.#: OMO-IRFW510ATM-1190

MOSFET
IRFW520ATM

Mfr.#: IRFW520ATM

OMO.#: OMO-IRFW520ATM-1190

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRFW520ATMFSC

Mfr.#: IRFW520ATMFSC

OMO.#: OMO-IRFW520ATMFSC-1190

नयाँ र मौलिक
IRFW530

Mfr.#: IRFW530

OMO.#: OMO-IRFW530-1190

नयाँ र मौलिक
IRFW530ATM

Mfr.#: IRFW530ATM

OMO.#: OMO-IRFW530ATM-1190

MOSFET 100V N-Channel A-FET
IRFW530ATM-NL

Mfr.#: IRFW530ATM-NL

OMO.#: OMO-IRFW530ATM-NL-1190

नयाँ र मौलिक
IRFW540

Mfr.#: IRFW540

OMO.#: OMO-IRFW540-1190

नयाँ र मौलिक
IRFW540ATM_NL

Mfr.#: IRFW540ATM_NL

OMO.#: OMO-IRFW540ATM-NL-1190

नयाँ र मौलिक
IRFW550A

Mfr.#: IRFW550A

OMO.#: OMO-IRFW550A-1190

नयाँ र मौलिक
IRFW550ATM

Mfr.#: IRFW550ATM

OMO.#: OMO-IRFW550ATM-1190

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
IRFW520ATM को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.५७
US$ ०.५७
10
US$ ०.५४
US$ ५.४२
100
US$ ०.५१
US$ ५१.३०
500
US$ ०.४८
US$ २४२.२५
1000
US$ ०.४६
US$ ४५६.००
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