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SI8817DB-T2-E1.

SI8817DB-T2-E1.
Mfr. #:
SI8817DB-T2-E1.
निर्माता:
Vishay Intertechnologies
विवरण:
Transistor Polarity:P Channel, Continuous Drain Current Id:2.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.061ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power Di
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI8817DB-T2-E1. डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
SI881, Si88, SI8
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
SI8817DB-T2-E1
DISTI # V72:2272_09216539		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R
RoHS: Compliant		3005
  • 3000:$0.1587
  • 1000:$0.1741
  • 500:$0.2249
  • 250:$0.2457
  • 100:$0.2730
  • 25:$0.3631
  • 10:$0.4034
  • 1:$0.5300
SI8817DB-T2-E1
DISTI # V36:1790_09216539		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R
RoHS: Compliant		0
  • 3000000:$0.1399
  • 1500000:$0.1401
  • 300000:$0.1497
  • 30000:$0.1645
  • 3000:$0.1669
SI8817DB-T2-E1
DISTI # 25790132		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R
RoHS: Compliant		3005
  • 3000:$0.1587
  • 1000:$0.1741
  • 500:$0.2249
  • 250:$0.2457
  • 100:$0.2730
  • 48:$0.3631
SI8817DB-T2-E1
DISTI # SI8817DB-T2-E1		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8817DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI8817DB-T2-E1
    DISTI # SI8817DB-T2-E1    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R (Alt: SI8817DB-T2-E1)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.1439
    • 500:€0.1469
    • 100:€0.1489
    • 50:€0.1549
    • 25:€0.1679
    • 10:€0.1949
    • 1:€0.2859
    SI8817DB-T2-E1.
    DISTI # 28AC2186    		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.061ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:900mW,No. of Pins:4Pins RoHS Compliant: No0
      SI8817DB-T2-E1Vishay Intertechnologies 3000
        SI8817DB-T2-E1Vishay Siliconix 195
        • 13:$0.4125
        • 50:$0.2681
        • 188:$0.1547
        SI8817DB-T2-E1Vishay Siliconix 156
        • 46:$0.2750
        • 10:$0.4400
        • 1:$0.5500
        छवि भाग # विवरण
        SI8817DB-T2-E1

        Mfr.#: SI8817DB-T2-E1

        OMO.#: OMO-SI8817DB-T2-E1-VISHAY

        		 MOSFET P-CH 20V MICROFOOT
        SI8817DB-T2-E1.

        Mfr.#: SI8817DB-T2-E1.

        OMO.#: OMO-SI8817DB-T2-E1--1190

        		 Transistor Polarity:P Channel, Continuous Drain Current Id:2.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.061ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power Di
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        1000
        मात्रा प्रविष्ट गर्नुहोस्:
        SI8817DB-T2-E1. को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
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        US$ ०.००
        10
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        100
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        500
        US$ ०.००
        US$ ०.००
        1000
        US$ ०.००
        US$ ०.००
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