IPT60R125G7XTMA1

IPT60R125G7XTMA1
Mfr. #:
IPT60R125G7XTMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CH 650V 20A HSOF-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPT60R125G7XTMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
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ECAD Model:
थप जानकारी:
IPT60R125G7XTMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
IPT60R1, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 20A 9-Pin(8+Tab) HSOF T/R
***ark
Mosfet, N-Ch, 600V, 20A, 120W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.108Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
भाग # Mfg। विवरण स्टक मूल्य
IPT60R125G7XTMA1
DISTI # V72:2272_16563205
Infineon Technologies AGHIGH POWER_NEW0
    IPT60R125G7XTMA1
    DISTI # V36:1790_16563205
    Infineon Technologies AGHIGH POWER_NEW0
    • 2000000:$1.7670
    • 1000000:$1.7690
    • 200000:$1.8910
    • 20000:$2.0860
    • 2000:$2.1180
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V 20A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    74In Stock
    • 1000:$2.2963
    • 500:$2.7227
    • 100:$3.1984
    • 10:$3.9040
    • 1:$4.3500
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 20A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    74In Stock
    • 1000:$2.2963
    • 500:$2.7227
    • 100:$3.1984
    • 10:$3.9040
    • 1:$4.3500
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 650V 20A HSOF-8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 2000:$2.1179
    IPT60R125G7XTMA1
    DISTI # SP001579334
    Infineon Technologies AGTrans MOSFET N 650V 20A 8-Pin HSOF T/R (Alt: SP001579334)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel
    Europe - 500
    • 20000:€1.5900
    • 12000:€1.7900
    • 8000:€1.8900
    • 4000:€1.9900
    • 2000:€2.0900
    IPT60R125G7XTMA1
    DISTI # IPT60R125G7XTMA1
    Infineon Technologies AGTrans MOSFET N 650V 20A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT60R125G7XTMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 12000:$1.8900
    • 20000:$1.8900
    • 8000:$1.9900
    • 2000:$2.0900
    • 4000:$2.0900
    IPT60R125G7XTMA1
    DISTI # 84AC6843
    Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 120W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2401
    • 1000:$2.1400
    • 500:$2.5400
    • 250:$2.8300
    • 100:$2.9800
    • 50:$3.1300
    • 25:$3.2900
    • 10:$3.4400
    • 1:$4.0500
    IPT60R125G7XTMA1
    DISTI # 726-IPT60R125G7XTMA1
    Infineon Technologies AGMOSFET HIGH POWER NEW
    RoHS: Compliant
    987
    • 1:$4.0100
    • 10:$3.4100
    • 100:$2.9500
    • 250:$2.8000
    • 500:$2.5100
    • 1000:$2.1200
    • 2000:$2.0100
    • 4000:$1.9400
    IPT60R125G7XTMA1
    DISTI # 2983373
    Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 120W, HSOF
    RoHS: Compliant
    2401
    • 1000:$3.0400
    • 500:$3.2900
    • 250:$3.6700
    • 100:$3.8500
    • 10:$4.4500
    • 1:$5.8500
    IPT60R125G7XTMA1
    DISTI # 2983373
    Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 120W, HSOF2408
    • 500:£1.8300
    • 250:£2.0500
    • 100:£2.1600
    • 10:£2.4900
    • 1:£3.2800
    छवि भाग # विवरण
    IPT60R125G7XTMA1

    Mfr.#: IPT60R125G7XTMA1

    OMO.#: OMO-IPT60R125G7XTMA1

    MOSFET HIGH POWER NEW
    IPT60R125G7XTMA1

    Mfr.#: IPT60R125G7XTMA1

    OMO.#: OMO-IPT60R125G7XTMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 650V 20A HSOF-8
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1500
    मात्रा प्रविष्ट गर्नुहोस्:
    IPT60R125G7XTMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.६५
    US$ २.६५
    10
    US$ २.५२
    US$ २५.१८
    100
    US$ २.३९
    US$ २३८.५५
    500
    US$ २.२५
    US$ १ १२६.४५
    1000
    US$ २.१२
    US$ २ १२०.४०
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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