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SIHD12N50EGE3

SIHD12N50EGE3
Mfr. #:
SIHD12N50EGE3
निर्माता:
Vishay Intertechnologies
विवरण:
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHD12N50EGE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
SIHD12, SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
SIHD12N50E-GE3
DISTI # V36:1790_09218423		Vishay IntertechnologiesN-CHANNEL 500V0
  • 3000000:$0.7908
  • 1500000:$0.7927
  • 300000:$0.9153
  • 30000:$1.1100
  • 3000:$1.1420
SIHD12N50E-GE3
DISTI # SIHD12N50E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 500V DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5455In Stock
  • 6000:$0.7917
  • 3000:$0.8222
  • 500:$1.0658
  • 100:$1.2972
  • 25:$1.5224
  • 10:$1.6140
  • 1:$1.8000
SIHD12N50E-GE3
DISTI # SIHD12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin DPAK (Alt: SIHD12N50E-GE3)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€0.6919
  • 18000:€0.7229
  • 12000:€0.8179
  • 6000:€1.0079
  • 3000:€1.4059
SIHD12N50E-GE3
DISTI # SIHD12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7429
  • 18000:$0.7639
  • 12000:$0.7849
  • 6000:$0.8189
  • 3000:$0.8439
SIHD12N50E-GE3
DISTI # 43Y2396		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes3878
  • 500:$1.0200
  • 250:$1.1000
  • 100:$1.1700
  • 50:$1.2800
  • 25:$1.3900
  • 10:$1.5000
  • 1:$1.8200
SIHD12N50E-GE3
DISTI # 78-SIHD12N50E-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3276
  • 1:$1.8000
  • 10:$1.4900
  • 100:$1.1600
  • 500:$1.0100
  • 1000:$0.8410
  • 3000:$0.7840
  • 6000:$0.7550
  • 9000:$0.7250
SIHD12N50EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		3000
    SIHD12N50E-GE3
    DISTI # 2471940    		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-33931
    • 500:£0.7010
    • 250:£0.7520
    • 100:£0.8020
    • 25:£1.0400
    • 5:£1.2600
    SIHD12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		Americas -
      SIHD12N50E-GE3
      DISTI # 2471940      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		3878
      • 6000:$1.2300
      • 3000:$1.2400
      • 500:$1.6100
      • 100:$1.9600
      • 25:$2.3000
      • 10:$2.4400
      • 1:$2.7100
      SIHD12N50E-GE3
      DISTI # 2471940RL      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 10.5A, TO-252-3
      RoHS: Compliant      		0
      • 6000:$1.2300
      • 3000:$1.2400
      • 500:$1.6100
      • 100:$1.9600
      • 25:$2.3000
      • 10:$2.4400
      • 1:$2.7100
      छवि भाग # विवरण
      SIHD12N50E-GE3

      Mfr.#: SIHD12N50E-GE3

      OMO.#: OMO-SIHD12N50E-GE3

      		 MOSFET 500V Vds 30V Vgs DPAK (TO-252)
      SIHD12N50E-GE3

      Mfr.#: SIHD12N50E-GE3

      OMO.#: OMO-SIHD12N50E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET N-Channel 500V
      SIHD12N50E

      Mfr.#: SIHD12N50E

      OMO.#: OMO-SIHD12N50E-1190

      		 नयाँ र मौलिक
      SIHD12N50EGE3

      Mfr.#: SIHD12N50EGE3

      OMO.#: OMO-SIHD12N50EGE3-1190

      		 Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHD12N50EGE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
      बाट सुरु गर्नुहोस्
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