OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

IPL60R104C7AUMA1

IPL60R104C7AUMA1
Mfr. #:
IPL60R104C7AUMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CH 600V 20A 4VSON
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPL60R104C7AUMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPL60R104C7AUMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
IPL60R10, IPL60R1, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 104 mOhm 42 nC Surface Mount CoolMOS™ Power Mosfet - VSON-4
***ark
Mosfet, N-Ch, 600V, 20A, 150Deg C, 122W; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
भाग # Mfg। विवरण स्टक मूल्य
IPL60R104C7AUMA1
DISTI # 33132396		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R3000
  • 3000:$2.5888
IPL60R104C7AUMA1
DISTI # IPL60R104C7AUMA1-ND		Infineon Technologies AGMOSFET N-CH 600V 20A 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$2.8864
IPL60R104C7AUMA1
DISTI # V36:1790_13984889		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R0
  • 3000000:$2.4080
  • 1500000:$2.4100
  • 300000:$2.5740
  • 30000:$2.8490
  • 3000:$2.8940
IPL60R104C7AUMA1
DISTI # IPL60R104C7AUMA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL60R104C7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 18000:$2.5900
  • 30000:$2.5900
  • 12000:$2.6900
  • 6000:$2.7900
  • 3000:$2.8900
IPL60R104C7AUMA1
DISTI # SP001298008		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001298008)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€2.1900
  • 18000:€2.3900
  • 12000:€2.5900
  • 6000:€2.6900
  • 3000:€2.7900
IPL60R104C7AUMA1
DISTI # IPL60R104C7		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPL60R104C7)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 150000:$2.6163
  • 75000:$2.6499
  • 30000:$2.6843
  • 15000:$2.7196
  • 9000:$2.7931
  • 6000:$2.8707
  • 3000:$2.9527
IPL60R104C7AUMA1
DISTI # 84AC6833		Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 122W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.09ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes3163
  • 1000:$2.9200
  • 500:$3.4600
  • 250:$3.8600
  • 100:$4.0700
  • 50:$4.2800
  • 25:$4.4900
  • 10:$4.7000
  • 1:$5.5200
IPL60R104C7AUMA1
DISTI # 726-IPL60R104C7AUMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$5.4700
  • 10:$4.6500
  • 100:$4.0300
  • 250:$3.8200
  • 500:$3.4300
  • 1000:$2.8900
  • 3000:$2.7400
IPL60R104C7AUMA1
DISTI # 2983363		Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 122W, VSON3138
  • 100:£3.7000
  • 10:£4.2600
  • 1:£5.5600
IPL60R104C7AUMA1
DISTI # 2983363		Infineon Technologies AGMOSFET, N-CH, 600V, 20A, 122W, VSON
RoHS: Compliant		3138
  • 25:$4.1400
  • 1:$4.5700
छवि भाग # विवरण
IPL60R105P7AUMA1

Mfr.#: IPL60R105P7AUMA1

OMO.#: OMO-IPL60R105P7AUMA1

 MOSFET HIGH POWER_NEW
IPL60R104C7AUMA1

Mfr.#: IPL60R104C7AUMA1

OMO.#: OMO-IPL60R104C7AUMA1

 MOSFET HIGH POWER_NEW
IPL60R104C7

Mfr.#: IPL60R104C7

OMO.#: OMO-IPL60R104C7-1190

 नयाँ र मौलिक
IPL60R104C7AUMA1

Mfr.#: IPL60R104C7AUMA1

OMO.#: OMO-IPL60R104C7AUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 20A 4VSON
IPL60R105P7AUMA1

Mfr.#: IPL60R105P7AUMA1

OMO.#: OMO-IPL60R105P7AUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 4VSON
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
IPL60R104C7AUMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.००
US$ ०.००
10
US$ ०.००
US$ ०.००
100
US$ ०.००
US$ ०.००
500
US$ ०.००
US$ ०.००
1000
US$ ०.००
US$ ०.००
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • M-SERIES D-Sub Connectors
    M-SERIES D-Sub Connectors
    The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
  • TLV493D-A1B6 3D Magnetic Sensor
    TLV493D-A1B6 3D Magnetic Sensor
    Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
  • IR25750 Current Sensing IC
    IR25750 Current Sensing IC
    IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
  • 600 V Trench Ultra-Fast IGBTs
    600 V Trench Ultra-Fast IGBTs
    International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
  • DPS310 Digital Barometric Pressure Sensors
    DPS310 Digital Barometric Pressure Sensors
    Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.
More Newest Products
Top