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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| IPB530N15N3GATMA1 DISTI # 20128185 | Infineon Technologies AG | Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB530N15N3GATMA1 DISTI # IPB530N15N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 150V 21A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB530N15N3GATMA1 DISTI # IPB530N15N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 150V 21A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB530N15N3GATMA1 DISTI # IPB530N15N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 150V 21A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB530N15N3GATMA1 DISTI # V36:1790_06384234 | Infineon Technologies AG | Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB530N15N3GATMA1 DISTI # V72:2272_06384234 | Infineon Technologies AG | Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| IPB530N15N3 G DISTI # IPB530N15N3 G | Infineon Technologies AG | Trans MOSFET N-CH 150V 21A 3-Pin TO-263 T/R (Alt: IPB530N15N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 |
|
| IPB530N15N3GATMA1 DISTI # IPB530N15N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB530N15N3GATMA1) RoHS: Compliant Min Qty: 582 Container: Bulk | Americas - 0 |
|
| IPB530N15N3GATMA1 DISTI # IPB530N15N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB530N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB530N15N3GATMA1 DISTI # SP000521718 | Infineon Technologies AG | Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 (Alt: SP000521718) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
| IPB530N15N3GATMA1 DISTI # 34AC1658 | Infineon Technologies AG | MOSFET, N-CH, 150V, 21A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes | 940 |
|
| IPB530N15N3 G DISTI # 726-IPB530N15N3G | Infineon Technologies AG | MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3 RoHS: Compliant | 767 |
|
| IPB530N15N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 64 |
|
| IPB530N15N3GATMA1 DISTI # 2781071 | Infineon Technologies AG | MOSFET, N-CH, 150V, 21A, TO-263 RoHS: Compliant | 940 |
|
| IPB530N15N3GATMA1 DISTI # 2781071 | Infineon Technologies AG | MOSFET, N-CH, 150V, 21A, TO-263 | 989 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: IPB530N15N3 G OMO.#: OMO-IPB530N15N3-G |
MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3 |
|
Mfr.#: IPB530N15N3GATMA1 |
MOSFET N-CH 150V 21A TO263-3 |
|
Mfr.#: IPB530N15N3G OMO.#: OMO-IPB530N15N3G-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: IPB530N15N3 G OMO.#: OMO-IPB530N15N3-G-124 |
Darlington Transistors MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3 |