SI4464DY-T1-E3

SI4464DY-T1-E3
Mfr. #:
SI4464DY-T1-E3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 200V 1.7A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4464DY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4464DY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI4464DY-T1
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
TrenchFET
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
1.5W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
200V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
1.7A (Ta)
Rds-on-max-Id-Vgs
240 mOhm @ 2.2A, 10V
Vgs-th-max-Id
4V @ 250μA
गेट-चार्ज-Qg-Vgs
18nC @ 10V
Pd-शक्ति-डिसिपेशन
1.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
12 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
1.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
200 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
240 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
15 ns
सामान्य-टर्न-अन-डिले-समय
10 ns
च्यानल-मोड
वृद्धि
Tags
SI4464DY-T1, SI4464D, SI4464, SI446, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 200V 1.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
12459In Stock
  • 1000:$0.5646
  • 500:$0.7151
  • 100:$0.9221
  • 10:$1.1670
  • 1:$1.3200
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 200V 1.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
12459In Stock
  • 1000:$0.5646
  • 500:$0.7151
  • 100:$0.9221
  • 10:$1.1670
  • 1:$1.3200
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 200V 1.7A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
10000In Stock
  • 2500:$0.5116
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R (Alt: SI4464DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.7209
  • 5000:€0.4919
  • 10000:€0.4229
  • 15000:€0.3909
  • 25000:€0.3639
SI4464DY-T1-E3
DISTI # SI4464DY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.4519
  • 5000:$0.4389
  • 10000:$0.4209
  • 15000:$0.4089
  • 25000:$0.3979
SI4464DY-T1-E3
DISTI # 35K3467
Vishay IntertechnologiesN CH MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes0
  • 1:$0.6250
  • 2500:$0.6200
  • 5000:$0.6020
  • 10000:$0.5790
SI4464DY-T1-E3
DISTI # 06J7747
Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes0
  • 1:$1.4000
  • 10:$1.1500
  • 25:$1.0600
  • 50:$0.9710
  • 100:$0.8820
  • 250:$0.8200
  • 500:$0.7580
SI4464DY-T1-E3
DISTI # 70026108
Vishay SiliconixMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.195Ohm,ID 1.7A,SO-8,PD 1.5W,VGS +/-20V
RoHS: Compliant
1091
  • 1:$0.9700
  • 25:$0.9300
  • 100:$0.8500
  • 250:$0.8000
  • 500:$0.7300
SI4464DY-T1-E3
DISTI # 781-SI4464DY-T1-E3
Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs SO-8
RoHS: Compliant
1514
  • 1:$1.4000
  • 10:$1.1500
  • 100:$0.8820
  • 500:$0.7580
  • 1000:$0.5990
  • 2500:$0.5590
  • 5000:$0.5310
  • 10000:$0.5190
SI4464DY-T1-E3Vishay Intertechnologies 
RoHS: Compliant
2250Cut Tape/Mini-Reel
  • 1:$0.7300
  • 250:$0.6300
  • 500:$0.6200
  • 750:$0.6150
  • 1500:$0.5950
SI4464DY-T1-E3Vishay IntertechnologiesSingle N-Channel 200 V 0.24 Ohms Surface Mount Power Mosfet - SOIC-8
RoHS: Compliant
12500Reel
  • 2500:$0.5350
SI4464DY-T1-E3Vishay Intertechnologies 2068
    SI4464DY-T1-E3Vishay IntertechnologiesINSTOCK2910
      SI4464DY-T1-E3Vishay SemiconductorsINSTOCK2910
        SI4464DY-T1-E3
        DISTI # XSFP00000063472
        Vishay Siliconix 
        RoHS: Compliant
        6680
        • 2500:$1.4600
        • 6680:$1.3300
        छवि भाग # विवरण
        SI4464DY-T1-E3

        Mfr.#: SI4464DY-T1-E3

        OMO.#: OMO-SI4464DY-T1-E3

        MOSFET 200V Vds 20V Vgs SO-8
        SI4464DY-T1-GE3

        Mfr.#: SI4464DY-T1-GE3

        OMO.#: OMO-SI4464DY-T1-GE3

        MOSFET 200V Vds 20V Vgs SO-8
        SI4464DY-T1-E3-CUT TAPE

        Mfr.#: SI4464DY-T1-E3-CUT TAPE

        OMO.#: OMO-SI4464DY-T1-E3-CUT-TAPE-1190

        नयाँ र मौलिक
        SI4464DY-T1

        Mfr.#: SI4464DY-T1

        OMO.#: OMO-SI4464DY-T1-1190

        नयाँ र मौलिक
        SI4464DY-T1-E3

        Mfr.#: SI4464DY-T1-E3

        OMO.#: OMO-SI4464DY-T1-E3-VISHAY

        MOSFET N-CH 200V 1.7A 8-SOIC
        SI4464DY-T1-GE3

        Mfr.#: SI4464DY-T1-GE3

        OMO.#: OMO-SI4464DY-T1-GE3-VISHAY

        MOSFET N-CH 200V 1.7A 8-SOIC
        SI4464DY-TI-E3

        Mfr.#: SI4464DY-TI-E3

        OMO.#: OMO-SI4464DY-TI-E3-1190

        नयाँ र मौलिक
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        3500
        मात्रा प्रविष्ट गर्नुहोस्:
        SI4464DY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ०.६०
        US$ ०.६०
        10
        US$ ०.५७
        US$ ५.६८
        100
        US$ ०.५४
        US$ ५३.८४
        500
        US$ ०.५१
        US$ २५४.२५
        1000
        US$ ०.४८
        US$ ४७८.६०
        बाट सुरु गर्नुहोस्
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