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SIR424DP-T1-GE3

SIR424DP-T1-GE3
Mfr. #:
SIR424DP-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 20V 30A PPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR424DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIR424DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SIR424DP-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAKR SO-8
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PowerPAKR SO-8
कन्फिगरेसन
एकल क्वाड ड्रेन ट्रिपल स्रोत
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
41.7W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
1250pF @ 10V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
30A (Tc)
Rds-on-max-Id-Vgs
5.5 mOhm @ 20A, 10V
Vgs-th-max-Id
2.5V @ 250μA
गेट-चार्ज-Qg-Vgs
35nC @ 10V
Pd-शक्ति-डिसिपेशन
4.8 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
10 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
30 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
20 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
2.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
4.6 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
23 ns
सामान्य-टर्न-अन-डिले-समय
18 ns
Qg-गेट-चार्ज
22 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
80 S
च्यानल-मोड
वृद्धि
Tags
SIR42, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIR424DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 20 V; 8-Pin PowerPAK SO
***ure Electronics
SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:41.7W; No. Of Pins:8Pins Rohs Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
भाग # Mfg। विवरण स्टक मूल्य
SIR424DP-T1-GE3
DISTI # V72:2272_07432057		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 10:$0.6415
  • 1:$0.7429
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4158
SIR424DP-T1-GE3
DISTI # 27490183		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R3000
  • 3000:$0.4382
SIR424DP-T1-GE3
DISTI # 28976247		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 17:$0.6415
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.7809
  • 6000:€0.5599
  • 12000:€0.4539
  • 18000:€0.4009
  • 30000:€0.3839
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 70AC6481)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay Intertechnologies 3000
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 15R4881		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3.
DISTI # 30AC0117		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3
DISTI # 70616563		Vishay SiliconixSIR424DP-T1-GE3 N-channel MOSFET Transistor,23 A,20 V,8-Pin PowerPAK SO
RoHS: Compliant		0
  • 300:$0.5100
  • 600:$0.5000
  • 1500:$0.4900
  • 3000:$0.4800
SIR424DP-T1-GE3
DISTI # 781-SIR424DP-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		3647
  • 1:$0.9500
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4500
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 1:$1.5100
  • 10:$1.2300
  • 100:$0.9450
  • 500:$0.8140
  • 1000:$0.7120
  • 3000:$0.7120
SIR424DP-T1-GE3
DISTI # 2679709		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 3000:$0.5700
  • 6000:$0.5510
  • 9000:$0.5410
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 5:£0.6120
  • 50:£0.5880
  • 100:£0.4340
  • 500:£0.3410
  • 1500:£0.3260
SIR424DP-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		Americas - 15000
    SIR424DP-T1-GE3
    DISTI # C1S803603788924    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		3000
    • 3000:$0.5020
    SIR424DP-T1-GE3
    DISTI # C1S803601945880    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		2810
    • 250:$0.5057
    • 100:$0.5227
    • 25:$0.6392
    • 10:$0.6417
    छवि भाग # विवरण
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3

    		 MOSFET 20V Vds 20V Vgs PowerPAK SO-8
    SIR424DP-T1-E3

    Mfr.#: SIR424DP-T1-E3

    OMO.#: OMO-SIR424DP-T1-E3-1190

    		 नयाँ र मौलिक
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 30A PPAK SO-8
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIR424DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.५१
    US$ ०.५१
    10
    US$ ०.४९
    US$ ४.८८
    100
    US$ ०.४६
    US$ ४६.२०
    500
    US$ ०.४४
    US$ २१८.१५
    1000
    US$ ०.४१
    US$ ४१०.६०
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