A2I20H080GNR1

Mfr. #:: A2I20H080GNR1
निर्माता:: NXP / Freescale
विवरण:: RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: A2I20H080GNR1 डाटा पाना
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HTML Datasheet:: A2I20H080GNR1 Datasheet A2I20H080GNR1 Datasheet (P4-P6)A2I20H080GNR1 Datasheet (P7-P9)A2I20H080GNR1 Datasheet (P10-P12)A2I20H080GNR1 Datasheet (P13-P15)A2I20H080GNR1 Datasheet (P16-P18)A2I20H080GNR1 Datasheet (P19-P21)A2I20H080GNR1 Datasheet (P22)
ECAD Model:
थप जानकारी:: A2I20H080GNR1 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: NXP

उत्पादन कोटि:: आरएफ एम्पलीफायर

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-270WB-15

प्रकार:: RF LDMOS वाइडब्यान्ड एकीकृत पावर एम्पलीफायर

सञ्चालन आवृत्ति:: 1.8 GHz to 2.2 GHz

P1dB - कम्प्रेसन बिन्दु:: 48.5 dBm

पाउनु:: 27.8 dB

सञ्चालन आपूर्ति भोल्टेज:: 30 V

परीक्षण आवृत्ति:: 1.88 GHz

सञ्चालन आपूर्ति वर्तमान:: 195 mA

न्यूनतम परिचालन तापमान:: - 40 C

अधिकतम परिचालन तापमान:: + 150 C

प्याकेजिङ:: रील

ब्रान्ड:: NXP / Freescale

च्यानलहरूको संख्या:: 2 Channel

उत्पादन प्रकार:: आरएफ एम्पलीफायर

कारखाना प्याक मात्रा:: 500

उपश्रेणी:: वायरलेस र आरएफ एकीकृत सर्किट

भाग # उपनाम:: 935313345528

एकाइ वजन:: 0.056385 oz

Tags: A2I20H08, A2I20H, A2I20, A2I2, A2I

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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A2I20H080GNR1 विवरण

***W: Amplifier,1800 to 2200 MHz, 70 W, Typ Gain in dB is 28.2 @ 1840 MHz, 30 V, LDMOS, SOT1722

***escale Semiconductor: AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG., 28 V

***hardson RFPD: RF & MW POWER AMPLIFIER

***et: Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast

***i-Key: AIRFAST RF LDMOS WIDEBAND INTEGR

A2I20H080GNR1 थप जानकारी

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
A2I20H080GNR1 DISTI # A2I20H080GNR1-ND	NXP Semiconductors	AIRFAST RF LDMOS WIDEBAND INTEGR RoHS: Not compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	500:$43.4128
A2I20H080GNR1 DISTI # A2I20H080GNR1	NXP Semiconductors	Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast - Tape and Reel (Alt: A2I20H080GNR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$43.1900 1000:$41.4900 2000:$39.8900 3000:$38.3900 5000:$37.6900
A2I20H080GNR1 DISTI # 841-A2I20H080GNR1	NXP Semiconductors	RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V RoHS: Compliant	0	500:$43.4200
A2I20H080GNR1 DISTI # A2I20H080GNR1	NXP Semiconductors	RF & MW POWER AMPLIFIER RoHS: Compliant	490	1:$66.3000 10:$59.9200 25:$56.6500

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: A2I20H060NR1 OMO.#: OMO-A2I20H060NR1	RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP
	Mfr.#: A2I20H080NR1 OMO.#: OMO-A2I20H080NR1	RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
	Mfr.#: A2I20H060GNR1 OMO.#: OMO-A2I20H060GNR1	RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
	Mfr.#: A2I20H060GNR1 OMO.#: OMO-A2I20H060GNR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
	Mfr.#: A2I20H060NR1 OMO.#: OMO-A2I20H060NR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
	Mfr.#: A2I20H080GNR1 OMO.#: OMO-A2I20H080GNR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
	Mfr.#: A2I20H060N: OMO.#: OMO-A2I20H060N--1190	नयाँ र मौलिक
	Mfr.#: A2I20H080N OMO.#: OMO-A2I20H080N-1190	नयाँ र मौलिक
	Mfr.#: A2I20H080NQQ1633J OMO.#: OMO-A2I20H080NQQ1633J-1190	नयाँ र मौलिक
	Mfr.#: A2I20H080NR1 OMO.#: OMO-A2I20H080NR1-NXP-SEMICONDUCTORS	AIRFAST RF LDMOS WIDEBAND INTEGR

उपलब्धता

स्टक:: Available
अर्डर मा:: 1000
मात्रा प्रविष्ट गर्नुहोस्:

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बाट सुरु गर्नुहोस्

A2I20H08 4
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A2I20 13
A2I2 23
A2I 49

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A2I20H080GNR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes