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SI4668DY-T1-E3

SI4668DY-T1-E3
Mfr. #:
SI4668DY-T1-E3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 25V 16.2A 5.0W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4668DY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4668DY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI4668DY-E3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SOIC-Narrow-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
2.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
18 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
16 V
आईडी-निरन्तर-नाली-वर्तमान
11.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
25 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
10.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
73 ns
सामान्य-टर्न-अन-डिले-समय
21 ns
च्यानल-मोड
वृद्धि
Tags
SI466, SI46, SI4
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 25V 16.2A 8SO
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4668DY-T1-E3
DISTI # SI4668DY-T1-E3-ND		Vishay SiliconixMOSFET N-CH 25V 16.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.5236
SI4668DY-T1-E3
DISTI # 781-SI4668DY-E3		Vishay IntertechnologiesMOSFET 25V 16.2A 5.0W
RoHS: Compliant		0
  • 2500:$0.4760
  • 5000:$0.4530
  • 10000:$0.4360
छवि भाग # विवरण
SI4668DY-T1-GE3

Mfr.#: SI4668DY-T1-GE3

OMO.#: OMO-SI4668DY-T1-GE3

 MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
SI4668DY-T1-E3

Mfr.#: SI4668DY-T1-E3

OMO.#: OMO-SI4668DY-T1-E3

 MOSFET 25V 16.2A 5.0W
SI4668DY-T1-E3

Mfr.#: SI4668DY-T1-E3

OMO.#: OMO-SI4668DY-T1-E3-VISHAY

 RF Bipolar Transistors MOSFET 25V 16.2A 5.0W
SI4668DY-T1-GE3

Mfr.#: SI4668DY-T1-GE3

OMO.#: OMO-SI4668DY-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 25V 16.2A 5.0W 10.5mohm @ 10V
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
SI4668DY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.६५
US$ ०.६५
10
US$ ०.६२
US$ ६.२१
100
US$ ०.५९
US$ ५८.८६
500
US$ ०.५६
US$ २७७.९५
1000
US$ ०.५२
US$ ५२३.२०
बाट सुरु गर्नुहोस्
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