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SI4563DY-T1-GE3

SI4563DY-T1-GE3
Mfr. #:
SI4563DY-T1-GE3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4563DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
टेप र रिल (TR)
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
FET-प्रकार
N र P- च्यानल
पावर-अधिकतम
3.25W
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
40V
इनपुट-Capacitance-Ciss-Vds
2390pF @ 20V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
8A
Rds-on-max-Id-Vgs
16 mOhm @ 5A, 10V
Vgs-th-max-Id
2V @ 250μA
गेट-चार्ज-Qg-Vgs
85nC @ 10V
Tags
SI456, SI45, SI4
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 40V 8A/6.6A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:NPN & PNP; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
***ment14 APAC
NPN & PNP MOSFET, SOIC; Transistor Polar; NPN & PNP MOSFET, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:8A; Continuous Drain Current Id, P Channel:-6.6A; Drain Source Voltage Vds, N Channel:40V; Drain Source Voltage Vds, P Channel:-40V
भाग # Mfg। विवरण स्टक मूल्य
SI4563DY-T1-GE3
DISTI # SI4563DY-T1-GE3-ND		Vishay SiliconixMOSFET N/P-CH 40V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4563DY-T1-GE3
    DISTI # 781-SI4563DY-GE3    		Vishay IntertechnologiesMOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
    RoHS: Compliant    		0
      छवि भाग # विवरण
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3

      		 MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
      SI4563DY-T1-E3

      Mfr.#: SI4563DY-T1-E3

      OMO.#: OMO-SI4563DY-T1-E3-VISHAY

      		 MOSFET N/P-CH 40V 8A 8-SOIC
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2000
      मात्रा प्रविष्ट गर्नुहोस्:
      SI4563DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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