NE3514S02-T1D-A

NE3514S02-T1D-A
Mfr. #:
NE3514S02-T1D-A
निर्माता:
Rochester Electronics, LLC
विवरण:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NE3514S02-T1D-A डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
CEL
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
रील
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
S0-2
प्रविधि
GaAs
ट्रान्जिस्टर-प्रकार
pHEMT
पाउनु
10 dB
Pd-शक्ति-डिसिपेशन
165 mW
अधिकतम-सञ्चालन-तापमान
+ 125 C
सञ्चालन - आवृत्ति
20 GHz
आईडी-निरन्तर-नाली-वर्तमान
70 mA
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
4 V
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
55 mS
Vgs-गेट-स्रोत-ब्रेकडाउन-भोल्टेज
- 3 V
NF-शोर-चित्र
0.75 dB
Tags
NE3514S02-T, NE3514, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR HFET
***i-Key
HJ-FET NCH 10DB S02
भाग # Mfg। विवरण स्टक मूल्य
NE3514S02-T1D-ARenesas Electronics Corporation 
RoHS: Not Compliant
50000
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
NE3514S02-T1D-A
DISTI # 551-NE3514S02-T1D-A
California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
RoHS: Compliant
0
    NE3514S02-T1D-A
    DISTI # NE3514S02-T1D-A
    Renesas Electronics CorporationRF SMALL SIGNAL TRANSISTOR HFET
    RoHS: Compliant
    0
      छवि भाग # विवरण
      NE3514S02-T1C-A(K)

      Mfr.#: NE3514S02-T1C-A(K)

      OMO.#: OMO-NE3514S02-T1C-A-K--1152

      RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
      NE3514S02-T1B-A

      Mfr.#: NE3514S02-T1B-A

      OMO.#: OMO-NE3514S02-T1B-A-1152

      RF SMALL SIGNAL TRANSISTOR HFET
      NE3514S02-T1D-A

      Mfr.#: NE3514S02-T1D-A

      OMO.#: OMO-NE3514S02-T1D-A-318

      RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
      NE3514S02-T1C-A

      Mfr.#: NE3514S02-T1C-A

      OMO.#: OMO-NE3514S02-T1C-A-CEL

      RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
      NE3514S02-A

      Mfr.#: NE3514S02-A

      OMO.#: OMO-NE3514S02-A-CEL

      RF JFET Transistors K Band Super Low Noise Amp N-Ch
      NE3514S02

      Mfr.#: NE3514S02

      OMO.#: OMO-NE3514S02-1190

      नयाँ र मौलिक
      NE3514S02-T10

      Mfr.#: NE3514S02-T10

      OMO.#: OMO-NE3514S02-T10-1190

      नयाँ र मौलिक
      NE3514S02-T1C

      Mfr.#: NE3514S02-T1C

      OMO.#: OMO-NE3514S02-T1C-1190

      नयाँ र मौलिक
      NE3514S02-T1D

      Mfr.#: NE3514S02-T1D

      OMO.#: OMO-NE3514S02-T1D-1190

      नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      NE3514S02-T1D-A को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.९३
      US$ ०.९३
      10
      US$ ०.८८
      US$ ८.८३
      100
      US$ ०.८४
      US$ ८३.७०
      500
      US$ ०.७९
      US$ ३९५.२५
      1000
      US$ ०.७४
      US$ ७४४.००
      बाट सुरु गर्नुहोस्
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