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MRFE6VP6300HSR5

MRFE6VP6300HSR5
Mfr. #:
MRFE6VP6300HSR5
निर्माता:
NXP Semiconductors
विवरण:
RF MOSFET Transistors VHV6 300W50VISM NI780S-4
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MRFE6VP6300HSR5 डाटा पाना
डेलिभरी:
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भुक्तानी:
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थप जानकारी:
MRFE6VP6300HSR5 थप जानकारी MRFE6VP6300HSR5 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता
NXP / Freescale
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
MRFE6VP6300H
टाइप गर्नुहोस्
आरएफ पावर MOSFET
प्याकेजिङ
रील
एकाइ - वजन
0.161213 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
NI-780S-4
प्रविधि
सि
पाउनु
26.6 dB at 230 MHz
आउटपुट-पावर
300 W at Peak
Pd-शक्ति-डिसिपेशन
1050 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 30 C
सञ्चालन - आवृत्ति
1.8 MHz to 600 MHz
Vgs-गेट-स्रोत-भोल्टेज
10 V
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
130 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
2.2 V
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
***et
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30
***ical
Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R
***et Europe
Trans MOSFET N-CH 130V 4-Pin NI-780S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 130V 230MHZ NI780S-4
***ark
RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes
MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
भाग # Mfg। विवरण स्टक मूल्य
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI780S-4
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$95.5168
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$97.2900
  • 100:$93.4900
  • 200:$89.7900
  • 300:$86.5900
  • 500:$84.8900
MRFE6VP6300HSR5
DISTI # 13T4415		NXP SemiconductorsRF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes0
  • 1:$111.5100
  • 10:$105.5200
  • 25:$100.1400
  • 50:$96.8000
  • 100:$88.8200
  • 250:$86.1900
  • 500:$83.4900
MRFE6VP6300HSR5
DISTI # 841-MRFE6VP6300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 300W50VISM NI780S-4
RoHS: Compliant		0
  • 50:$95.5200
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		25
  • 1:$111.6900
  • 10:$103.2200
  • 25:$100.1900
छवि भाग # विवरण
MRFE6VP6300HR5

Mfr.#: MRFE6VP6300HR5

OMO.#: OMO-MRFE6VP6300HR5

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MRFE6VP6300-88

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Mfr.#: MRFE6VP8600HR6

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MRFE6VP8600HSR6

Mfr.#: MRFE6VP8600HSR6

OMO.#: OMO-MRFE6VP8600HSR6-NXP-SEMICONDUCTORS

 FET RF 2CH 130V 860MHZ NI1230S
MRFE6VP61K25NR6528

Mfr.#: MRFE6VP61K25NR6528

OMO.#: OMO-MRFE6VP61K25NR6528-1152

 Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25HSR5

Mfr.#: MRFE6VP61K25HSR5

OMO.#: OMO-MRFE6VP61K25HSR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1.25KW ISM NI1230HS
MRFE6VP5600HR5

Mfr.#: MRFE6VP5600HR5

OMO.#: OMO-MRFE6VP5600HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 600W 50V NI1230H
MRFE6VP8600HR5

Mfr.#: MRFE6VP8600HR5

OMO.#: OMO-MRFE6VP8600HR5-NXP-SEMICONDUCTORS

 FET RF 2CH 130V 860MHZ NI-1230
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
MRFE6VP6300HSR5 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १२५.२४
US$ १२५.२४
10
US$ ११८.९७
US$ १ १८९.७३
100
US$ ११२.७१
US$ ११ २७१.१५
500
US$ १०६.४५
US$ ५३ २२४.९०
1000
US$ १००.१९
US$ १०० १८८.००
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