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SI4116DY-T1-GE3

SI4116DY-T1-GE3
Mfr. #:
SI4116DY-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 25V 18A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4116DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4116DY-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI4466DY-T1-E3-S
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SOIC-Narrow-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
2.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
15 ns
उदय-समय
11 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
12.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
25 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
8.6 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
50 ns
सामान्य-टर्न-अन-डिले-समय
13 ns
च्यानल-मोड
वृद्धि
Tags
SI4116DY-T, SI4116, SI411, SI41, SI4
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R / MOSFET N-CH 25V 18A 8-SOIC
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0115ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.4V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Power Dissipation Pd:5W; Voltage Vgs Max:12V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4116DY-T1-GE3
DISTI # V72:2272_09216447		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant		1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 10:$0.8532
  • 1:$0.9820
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.4911
SI4116DY-T1-GE3
DISTI # 29064963		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant		1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 14:$0.8532
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.8429
  • 5000:€0.6039
  • 10000:€0.4899
  • 15000:€0.4329
  • 25000:€0.4149
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5429
  • 5000:$0.5269
  • 10000:$0.5049
  • 15000:$0.4909
  • 25000:$0.4779
SI4116DY-T1-GE3
DISTI # 16P3725		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.8220
SI4116DY-T1-GE3
DISTI # 16P3725		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):11.5mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V,Product Range:-, RoHS Compliant: Yes78
  • 1:$1.5100
  • 10:$1.2500
  • 25:$1.1500
  • 50:$1.0500
  • 100:$0.9550
  • 250:$0.8890
  • 500:$0.8220
SI4116DY-T1-GE3
DISTI # R1082526		Vishay DaleTRANSITOR,SI4804BDY
RoHS: Compliant		0
  • 5:$1.2800
  • 25:$1.0600
  • 100:$0.9700
  • 250:$0.8900
  • 500:$0.8300
SI4116DY-T1-GE3
DISTI # 781-SI4116DY-T1-GE3		Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
RoHS: Compliant		2103
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.6850
  • 1000:$0.6010
  • 2500:$0.6000
SI4116DY-T1-GE3
DISTI # 7103317P		Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, RL2600
  • 50:£0.6260
SI4116DY-T1-GE3
DISTI # 7103317		Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, PK725
  • 5:£0.9720
  • 50:£0.6260
SI4116DYT1GE3Vishay Intertechnologies 
RoHS: Compliant		Europe - 10000
    SI4116DY-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
    RoHS: Compliant    		Americas -
    • 2500:$0.4820
    • 10000:$0.4410
    SI4116DY-T1-GE3
    DISTI # 1794777    		Vishay IntertechnologiesMOSFET, N CH, 25V, 18A, 8SOIC
    RoHS: Compliant    		0
    • 5:£1.0800
    • 25:£0.6960
    • 100:£0.6720
    • 250:£0.6470
    • 500:£0.6230
    SI4116DY-T1-GE3
    DISTI # C1S803601003591    		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
    RoHS: Compliant    		1222
    • 250:$0.6961
    • 100:$0.6981
    • 25:$0.8498
    • 10:$0.8533
    छवि भाग # विवरण
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3

    		 MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3

    		 MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3-VISHAY

    		 IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V
    SI4116DY

    Mfr.#: SI4116DY

    OMO.#: OMO-SI4116DY-1190

    		 नयाँ र मौलिक
    SI4116DY-T1

    Mfr.#: SI4116DY-T1

    OMO.#: OMO-SI4116DY-T1-1190

    		 नयाँ र मौलिक
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3-VISHAY

    		 MOSFET N-CH 25V 18A 8-SOIC
    SI4116DYT1GE3

    Mfr.#: SI4116DYT1GE3

    OMO.#: OMO-SI4116DYT1GE3-1190

    		 Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5500
    मात्रा प्रविष्ट गर्नुहोस्:
    SI4116DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.५७
    US$ ०.५७
    10
    US$ ०.५४
    US$ ५.३९
    100
    US$ ०.५१
    US$ ५१.०३
    500
    US$ ०.४८
    US$ २४१.००
    1000
    US$ ०.४५
    US$ ४५३.६०
    बाट सुरु गर्नुहोस्
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