GS8182S18BGD-200

GS8182S18BGD-200
Mfr. #:
GS8182S18BGD-200
निर्माता:
GSI Technology
विवरण:
SRAM 1.8 or 1.5V 1M x 18 18M
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
GS8182S18BGD-200 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
GS8182S18BGD-200 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
GSI प्रविधि
उत्पादन कोटि:
SRAM
RoHS:
Y
मेमोरी साइज:
18 Mbit
संगठन:
1 M x 18
अधिकतम घडी आवृत्ति:
200 MHz
इन्टरफेस प्रकार:
समानान्तर
आपूर्ति भोल्टेज - अधिकतम:
1.9 V
आपूर्ति भोल्टेज - न्यूनतम:
1.7 V
हालको आपूर्ति - अधिकतम:
355 mA
न्यूनतम परिचालन तापमान:
0 C
अधिकतम परिचालन तापमान:
+ 70 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
BGA-165
प्याकेजिङ:
ट्रे
मेमोरी प्रकार:
DDR-II
शृङ्खला:
GS8182S18BGD
प्रकार:
SigmaSIO DDR-II
ब्रान्ड:
GSI प्रविधि
नमी संवेदनशील:
हो
उत्पादन प्रकार:
SRAM
कारखाना प्याक मात्रा:
18
उपश्रेणी:
मेमोरी र डाटा भण्डारण
व्यापार नाम:
SigmaSIO DDR-II
Tags
GS8182S18BGD-2, GS8182S18BG, GS8182S1, GS8182S, GS8182, GS818, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**c
    E**c
    US

    Item as described and shipped relatively quickly.

    2019-07-16
    K***i
    K***i
    BY

    Tested with the tester eddy71-these are conventional multimeters lm358. The current of rest they have 0.4 ma, and should be 2.5 ma.

    2019-05-09
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ure Electronics
CY7C1412KV18 Series 1.9V 18 Mb (1 M x 18) 250 MHz Surface Mount SRAM - FBGA-165
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1312 Tray ic memory 250MHz 450ps 15mm 560mA
*** Stop Electro
QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***et Europe
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II, 18432 Kb Density, 250 MHz Frequency, BGA-165
***-Wing Technology
e0 Surface Mount CY7C1312 Tray ic memory 250MHz 450ps 15mm 560mA
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***DA Technology Co., Ltd.
Product Description Demo for Development.
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
छवि भाग # विवरण
GS8182S18BD-167I

Mfr.#: GS8182S18BD-167I

OMO.#: OMO-GS8182S18BD-167I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BD-300I

Mfr.#: GS8182S18BD-300I

OMO.#: OMO-GS8182S18BD-300I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BGD-250

Mfr.#: GS8182S18BGD-250

OMO.#: OMO-GS8182S18BGD-250

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BGD-200I

Mfr.#: GS8182S18BGD-200I

OMO.#: OMO-GS8182S18BGD-200I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BD-200I

Mfr.#: GS8182S18BD-200I

OMO.#: OMO-GS8182S18BD-200I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BGD-333

Mfr.#: GS8182S18BGD-333

OMO.#: OMO-GS8182S18BGD-333

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BD-375I

Mfr.#: GS8182S18BD-375I

OMO.#: OMO-GS8182S18BD-375I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BD-400

Mfr.#: GS8182S18BD-400

OMO.#: OMO-GS8182S18BD-400

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BD-400I

Mfr.#: GS8182S18BD-400I

OMO.#: OMO-GS8182S18BD-400I

SRAM 1.8 or 1.5V 1M x 18 18M
GS8182S18BGD-200

Mfr.#: GS8182S18BGD-200

OMO.#: OMO-GS8182S18BGD-200

SRAM 1.8 or 1.5V 1M x 18 18M
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
GS8182S18BGD-200 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १५.३१
US$ १५.३१
25
US$ १४.२१
US$ ३५५.२५
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • IP20 Latching Industrial USB
    TE's industrial ruggedized USB connectors have an integrated locking mechanism as well as a secondary lock to ensure lock strength.
  • DCmind Brushless SMi21 DC Motors with CANopen
    Brushless DC motors incorporating CANopen technology allow users to network several motors, and they are now available from Crouzet.
  • Compare GS8182S18BGD-200
    GS8182S18BGD200 vs GS8182S18BGD200I vs GS8182S18BGD250
  • Industrial Mini I/O Connector System
    TE Connectivity's industrial mini I/O connector system's unique features meet the strict demands of industrial control, robotics, and motion control applications.
  • Intelligent Buildings
    As today’s buildings become increasingly efficient and connected, TE Connectivity offers many solutions to solve complex connectivity challenges.
  • Photo Control Base and Cover
    TE Connectivity’s 76 mm diameter photo control base assembly provides an IP66-rated photo control enclosure, helping to ensure protection from harsh conditions.
Top