BSC037N08NS5ATMA1

Mfr. #:: BSC037N08NS5ATMA1
निर्माता:: Infineon Technologies
विवरण:: RF Bipolar Transistors MOSFET N-Ch 80V 100A TDSON-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: BSC037N08NS5ATMA1 डाटा पाना
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ECAD Model:
थप जानकारी:: BSC037N08NS5ATMA1 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Infineon टेक्नोलोजीहरू

उत्पादन कोटि: ट्रान्जिस्टर - FETs, MOSFETs - एकल

प्याकेजिङ: रील

अंश-उपनामहरू: BSC037N08NS5 SP001294988

एकाइ - वजन: 0.017870 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: TDSON-8

प्रविधि: सि

च्यानलहरूको संख्या: 1 Channel

कन्फिगरेसन: एकल

ट्रान्जिस्टर-प्रकार: 1 N-Channel

Pd-शक्ति-डिसिपेशन: 114 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 7 ns

उदय-समय: 10 ns

Vgs-गेट-स्रोत-भोल्टेज: +/- 20 V

आईडी-निरन्तर-नाली-वर्तमान: 100 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 80 V

Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज: 2.2 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 5.3 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 26 ns

सामान्य-टर्न-अन-डिले-समय: 14 ns

Qg-गेट-चार्ज: 46 nC

फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम: 47 S

च्यानल-मोड: वृद्धि

Tags: BSC037N08, BSC037, BSC03, BSC0, BSC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC037N08NS5ATMA1 विवरण

***ineon SCT: Trans Mosfet N-ch 80V 100A 8-PIN Tdson T/r, PG-TDSON-8, RoHS

***ark: Mosfet, N-Ch, 80V, 100A, 150Deg C, 114W; Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0034Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

BSC037N08NS5ATMA1 थप जानकारी

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1331In Stock	1000:$1.3049 500:$1.5749 100:$2.0249 10:$2.5200 1:$2.7900
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1331In Stock	1000:$1.3049 500:$1.5749 100:$2.0249 10:$2.5200 1:$2.7900
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.1359
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC037N08NS5ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.1439 10000:$1.1029 20000:$1.0629 30000:$1.0269 50000:$1.0089
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: BSC037N08NS5) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0	5000:$1.1347 10000:$1.1032 15000:$1.0734 25000:$1.0451 50000:$1.0316 125000:$1.0183 250000:$1.0054
BSC037N08NS5ATMA1 DISTI # SP001294988	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: SP001294988) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€1.2959 10000:€1.0799 20000:€0.9969 30000:€0.9249 50000:€0.8639
BSC037N08NS5ATMA1 DISTI # 13AC8332	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes	1863	1:$2.3400 10:$1.9900 25:$1.8600 50:$1.7200 100:$1.5900 250:$1.5000 500:$1.4000 1000:$1.1600
BSC037N08NS5ATMA1 DISTI # 726-BSC037N08NS5ATMA	Infineon Technologies AG	MOSFET N-Ch 80V 100A TDSON-8 RoHS: Compliant	9654	1:$2.3400 10:$1.9900 100:$1.5900 500:$1.4000 1000:$1.1600 2500:$1.0800 5000:$1.0400
BSC037N08NS5ATMA1 DISTI # 2725809	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON RoHS: Compliant	1863	1:$4.4600 10:$4.0200 100:$3.2300
BSC037N08NS5ATMA1 DISTI # 2725809	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON RoHS: Compliant	1847	1:£2.0500 10:£1.5500 100:£1.2300 250:£1.1600 500:£1.0900

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: BSC037N08NS5ATMA1 OMO.#: OMO-BSC037N08NS5ATMA1	MOSFET N-Ch 80V 100A TDSON-8
	Mfr.#: BSC037N08NS5TATMA1 OMO.#: OMO-BSC037N08NS5TATMA1	MOSFET TRENCH 40<-<100V
	Mfr.#: BSC037N025S OMO.#: OMO-BSC037N025S-1190	नयाँ र मौलिक
	Mfr.#: BSC037N025S G OMO.#: OMO-BSC037N025S-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 100A TDSON-8
	Mfr.#: BSC037N03LSCG OMO.#: OMO-BSC037N03LSCG-1190	नयाँ र मौलिक
	Mfr.#: BSC037N03MSCG OMO.#: OMO-BSC037N03MSCG-1190	नयाँ र मौलिक
	Mfr.#: BSC037N08NS5 OMO.#: OMO-BSC037N08NS5-1190	Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP
	Mfr.#: BSC037N08NS5ATMA1 OMO.#: OMO-BSC037N08NS5ATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 80V 100A TDSON-8

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
मात्रा प्रविष्ट गर्नुहोस्:

BSC037N08NS5ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.५१~~; ~~US$ १.५१~~

10: ~~US$ १.४४~~; ~~US$ १४.३८~~

100: ~~US$ १.३६~~; ~~US$ १३६.२०~~

500: ~~US$ १.२९~~; ~~US$ ६४३.१५~~

1000: ~~US$ १.२१~~; ~~US$ १ २१०.७०~~

बाट सुरु गर्नुहोस्

BSC037N08 3
BSC037 7
BSC03 76
BSC0 601
BSC 999

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BSC037N08NS5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes