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SI4386DY-T1-E3

SI4386DY-T1-E3
Mfr. #:
SI4386DY-T1-E3
निर्माता:
Vishay
विवरण:
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4386DY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4386DY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI4386DY-E3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
1.47W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
11A (Ta)
Rds-on-max-Id-Vgs
7 mOhm @ 16A, 10V
Vgs-th-max-Id
2.5V @ 250μA
गेट-चार्ज-Qg-Vgs
18nC @ 4.5V
Pd-शक्ति-डिसिपेशन
1.47 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
9 ns
उदय-समय
9 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
11 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
7 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
35 ns
सामान्य-टर्न-अन-डिले-समय
12 ns
च्यानल-मोड
वृद्धि
Tags
SI4386DY-T, SI4386D, SI4386, SI438, SI43, SI4
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
N-Channel MOSFETs N-CH REDUCED QG FAST SWITCHING
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4386DY-T1-E3
DISTI # V72:2272_09215556		Vishay IntertechnologiesTrans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
RoHS: Compliant		1865
  • 1000:$0.6183
  • 500:$0.6828
  • 250:$0.8676
  • 100:$0.8807
  • 25:$1.0632
  • 10:$1.0670
  • 1:$1.1776
SI4386DY-T1-E3
DISTI # SI4386DY-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6768In Stock
  • 1000:$0.5646
  • 500:$0.7151
  • 100:$0.9221
  • 10:$1.1670
  • 1:$1.3200
SI4386DY-T1-E3
DISTI # SI4386DY-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6768In Stock
  • 1000:$0.5646
  • 500:$0.7151
  • 100:$0.9221
  • 10:$1.1670
  • 1:$1.3200
SI4386DY-T1-E3
DISTI # SI4386DY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 2500:$0.5116
SI4386DY-T1-E3
DISTI # 25789845		Vishay IntertechnologiesTrans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
RoHS: Compliant		1865
  • 1000:$0.6183
  • 500:$0.6828
  • 250:$0.8676
  • 100:$0.8807
  • 25:$1.0632
  • 10:$1.0670
SI4386DY-T1-E3
DISTI # SI4386DY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4386DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5009
  • 5000:$0.4989
  • 10000:$0.4979
  • 15000:$0.4969
  • 25000:$0.4959
SI4386DY-T1-E3
DISTI # SI4386DY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R (Alt: SI4386DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4386DY-T1-E3
    DISTI # 75M5463    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 16A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):7mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
    • 1:$0.8650
    • 2500:$0.8650
    SI4386DY-T1-E3
    DISTI # 85W2146    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$1.6200
    • 10:$1.3400
    • 25:$1.2400
    • 50:$1.1400
    • 100:$1.0400
    • 500:$0.9090
    • 1000:$0.8660
    SI4386DY-T1-E3.
    DISTI # 30AC0155    		Vishay IntertechnologiesN-CH REDUCED QG, FAST SWITCHING MOSFET , ROHS COMPLIANT: YES0
    • 1:$0.8650
    • 2500:$0.8650
    SI4386DY-T1-E3
    DISTI # 781-SI4386DY-T1-E3    		Vishay IntertechnologiesMOSFET 30V 16A 3.1W 7.0mohm @ 10V
    RoHS: Compliant    		2817
    • 1:$1.6200
    • 10:$1.3400
    • 100:$1.0400
    • 500:$0.9090
    • 1000:$0.8660
    • 2500:$0.8650
    SI4386DYT1E3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 2500
      SI4386DY-T1-E3Vishay IntertechnologiesMOSFET 30V 16A 3.1W 7.0mohm @ 10VAmericas -
        SI4386DY-T1-E3
        DISTI # C1S803601003607        		Vishay IntertechnologiesMOSFETs
        RoHS: Compliant        		1865
        • 250:$0.8689
        • 100:$0.8807
        • 25:$1.0632
        • 10:$1.0670
        छवि भाग # विवरण
        SI4386DY-T1-E3

        Mfr.#: SI4386DY-T1-E3

        OMO.#: OMO-SI4386DY-T1-E3

        		 MOSFET 30V 16A 3.1W 7.0mohm @ 10V
        SI4386DY-T1-GE3

        Mfr.#: SI4386DY-T1-GE3

        OMO.#: OMO-SI4386DY-T1-GE3

        		 MOSFET 30V 16A 3.1W 7.0mohm @ 10V
        SI4386DY-T1-GE3

        Mfr.#: SI4386DY-T1-GE3

        OMO.#: OMO-SI4386DY-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 30V 16A 3.1W 7.0mohm @ 10V
        SI4386DY

        Mfr.#: SI4386DY

        OMO.#: OMO-SI4386DY-1190

        		 नयाँ र मौलिक
        SI4386DY-T1

        Mfr.#: SI4386DY-T1

        OMO.#: OMO-SI4386DY-T1-1190

        		 नयाँ र मौलिक
        SI4386DYT1E3

        Mfr.#: SI4386DYT1E3

        OMO.#: OMO-SI4386DYT1E3-1190

        		 Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        SI4386DY-T1-E3

        Mfr.#: SI4386DY-T1-E3

        OMO.#: OMO-SI4386DY-T1-E3-VISHAY

        		 Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        3000
        मात्रा प्रविष्ट गर्नुहोस्:
        SI4386DY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ०.६७
        US$ ०.६७
        10
        US$ ०.६४
        US$ ६.३६
        100
        US$ ०.६०
        US$ ६०.२७
        500
        US$ ०.५७
        US$ २८४.६५
        1000
        US$ ०.५४
        US$ ५३५.८०
        बाट सुरु गर्नुहोस्
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