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SI2307BDS-T1-E3

SI2307BDS-T1-E3
Mfr. #:
SI2307BDS-T1-E3
निर्माता:
Vishay
विवरण:
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2307BDS-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI2307BDS-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
आईसी चिप्स
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI2307BDS-E3
एकाइ - वजन
0.050717 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
TrenchFET
प्याकेज-केस
TO-236-3, SC-59, SOT-23-3
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
SOT-23-3 (TO-236)
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET P- च्यानल, धातु अक्साइड
पावर-अधिकतम
750mW
ट्रान्जिस्टर-प्रकार
1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
380pF @ 15V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
2.5A (Ta)
Rds-on-max-Id-Vgs
78 mOhm @ 3.2A, 10V
Vgs-th-max-Id
3V @ 250μA
गेट-चार्ज-Qg-Vgs
15nC @ 10V
Pd-शक्ति-डिसिपेशन
750 mW
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
12 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
2.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
78 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
25 ns
सामान्य-टर्न-अन-डिले-समय
9 ns
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
5 S
च्यानल-मोड
वृद्धि
Tags
SI2307BDS-T, SI2307B, SI2307, SI230, SI23, SI2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W
***ure Electronics
Single P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
***ical
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
***C
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23
***eco
P-CH MOSFET SOT-23 30V 78MOHM @ 10V<AZ
***et Europe
Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 30V 2.5A SOT23-3
***Components
MOSFET P-Channel 30V 2.5A TO236
***
30V, 78MOHM @ 10V, SOT-23
***ser
P-Channel MOSFETs 30V 3.2A 1.25W
***ark
P Channel Mosfet, -30V, 2.5A To-236, Full Reel; Transistor Polarity:p Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.063Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3Vrohs Compliant: No
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.25W
***nell
MOSFET, CANALE P, -30V, -2.5A, SOT-23-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.5A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.063ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:750mW; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jun-2015); Temperatura di Esercizio Min:-55°C
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
भाग # Mfg। विवरण स्टक मूल्य
SI2307BDS-T1-E3
DISTI # V72:2272_07432050		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant		2185
  • 1000:$0.2152
  • 500:$0.2668
  • 250:$0.3416
  • 100:$0.3425
  • 25:$0.4258
  • 10:$0.4276
  • 1:$0.4860
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24407In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24407In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.1875
SI2307BDS-T1-E3
DISTI # 29567482		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant		2185
  • 1000:$0.2152
  • 500:$0.2668
  • 250:$0.3416
  • 100:$0.3425
  • 28:$0.4258
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2307BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1949
  • 6000:$0.1889
  • 12000:$0.1809
  • 18000:$0.1759
  • 30000:$0.1719
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3179
  • 6000:€0.2169
  • 12000:€0.1869
  • 18000:€0.1719
  • 30000:€0.1599
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2307BDS-T1-E3
    DISTI # 02J5180    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: 02J5180)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 1:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3
    DISTI # 64R4907    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 64R4907)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.9120
    • 25:$0.7280
    • 50:$0.6410
    • 100:$0.5520
    • 250:$0.5040
    • 500:$0.4560
    • 1000:$0.3650
    SI2307BDS-T1-E3
    DISTI # 64R4907    		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:750mW , RoHS Compliant: Yes3436
    • 1:$0.9120
    • 25:$0.7280
    • 50:$0.6410
    • 100:$0.5520
    • 250:$0.5040
    • 500:$0.4560
    • 1000:$0.3650
    SI2307BDS-T1-E3
    DISTI # 02J5180    		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 2.5A TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V, RoHS Compliant: Yes6000
    • 1:$0.3310
    • 3000:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3.
    DISTI # 30AC0138    		Vishay IntertechnologiesFOR NEW DESIGNS USE SI2307CDS-T1-GE3 , ROHS COMPLIANT: NO0
    • 1:$0.3380
    • 3000:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3
    DISTI # 70026066    		Vishay SiliconixMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.063Ohm,ID -2.5A,TO-236 (SOT-23),PD 0.75W
    RoHS: Compliant    		0
    • 3000:$0.3400
    • 6000:$0.3000
    • 9000:$0.2700
    SI2307BDS-T1-E3
    DISTI # 781-SI2307BDS-E3    		Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W
    RoHS: Compliant    		16579
    • 1:$0.7600
    • 10:$0.6070
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    • 3000:$0.2760
    • 6000:$0.2570
    • 9000:$0.2480
    SI2307BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
    RoHS: Compliant    		21000Reel
    • 3000:$0.2700
    SI2307BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
    RoHS: Compliant    		2945Cut Tape/Mini-Reel
    • 1:$0.3750
    • 250:$0.3200
    • 500:$0.3150
    • 750:$0.3100
    • 1500:$0.3000
    SI2307BDS-T1-E3Vishay BLH 2730
    • 12:$0.4500
    • 46:$0.2925
    • 172:$0.1688
    • 594:$0.1440
    • 1286:$0.1260
    SI2307BDS-T1-E3Vishay Intertechnologies 1625
      SI2307BDS-T1-E3Vishay Siliconix 165
      • 12:$0.4500
      • 46:$0.2925
      SI2307BDS-T1-E3Vishay Intertechnologies2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB2184
      • 1112:$0.1560
      • 201:$0.1800
      • 1:$0.6000
      SI2307BDS-T1-E3Vishay Semiconductors2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB132
      • 43:$0.3000
      • 9:$0.4800
      • 1:$0.6000
      SI2307BDS-T1-E3
      DISTI # XSFP00000063433      		Vishay Siliconix 
      RoHS: Compliant      		40343
      • 3000:$0.7500
      • 40343:$0.6818
      SI2307BDS-T1-E3
      DISTI # 1571143      		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 2.5A TO-236, FUL
      RoHS: Compliant      		6000
      • 3000:$1.0500
      SI2307BDS-T1-E3
      DISTI # 2396090      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -2.5A, SOT-23-3
      RoHS: Compliant      		3781
      • 1:$0.9350
      • 10:$0.7900
      • 100:$0.5920
      • 500:$0.4340
      • 1000:$0.4030
      SI2307BDS-T1-E3
      DISTI # C1S803600844070      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2185
      • 250:$0.3407
      • 100:$0.3416
      • 25:$0.4240
      • 10:$0.4258
      SI2307BDS-T1-E3
      DISTI # 2396090      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -2.5A, SOT-23-3
      RoHS: Compliant      		3714
      • 5:£0.4560
      • 25:£0.4240
      • 100:£0.3030
      • 250:£0.2630
      • 500:£0.2220
      SI2307BDS-T1-E3Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W
      RoHS: Compliant      		Americas -
        छवि भाग # विवरण
        SI2307BDS-T1-E3

        Mfr.#: SI2307BDS-T1-E3

        OMO.#: OMO-SI2307BDS-T1-E3

        		 MOSFET 30V 3.2A 1.25W
        SI2307BDS

        Mfr.#: SI2307BDS

        OMO.#: OMO-SI2307BDS-1190

        		 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
        SI2307BDS-T1-GE3

        Mfr.#: SI2307BDS-T1-GE3

        OMO.#: OMO-SI2307BDS-T1-GE3-VISHAY

        		 MOSFET P-CH 30V 2.5A SOT23-3
        SI2307BDS-T1-E3-CUT TAPE

        Mfr.#: SI2307BDS-T1-E3-CUT TAPE

        OMO.#: OMO-SI2307BDS-T1-E3-CUT-TAPE-1190

        		 नयाँ र मौलिक
        SI2307BDS-T1-E3

        Mfr.#: SI2307BDS-T1-E3

        OMO.#: OMO-SI2307BDS-T1-E3-VISHAY

        		 Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        3500
        मात्रा प्रविष्ट गर्नुहोस्:
        SI2307BDS-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ०.११
        US$ ०.११
        10
        US$ ०.११
        US$ १.०५
        100
        US$ ०.१०
        US$ ९.९६
        500
        US$ ०.०९
        US$ ४७.०५
        1000
        US$ ०.०९
        US$ ८८.६०
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