IGW40N60H3FKSA1

Mfr. #:: IGW40N60H3FKSA1
निर्माता:: Infineon Technologies
विवरण:: IGBT 600V 80A 306W TO247-3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IGW40N60H3FKSA1 डाटा पाना
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ECAD Model:

उत्पादन विशेषता
विशेषता मान

Tags: IGW40N60H, IGW40N60, IGW40N6, IGW40N, IGW40, IGW4, IGW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGW40N60H3FKSA1 विवरण

***ical: Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: High speed 600 V, 40 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS

***nell: IGBT,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:306W

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IGW40N60H3FKSA1 DISTI # V36:1790_06377752	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	240000:$2.0450 120000:$2.0480 24000:$2.3250 2400:$2.8260 240:$2.9100
IGW40N60H3FKSA1 DISTI # IGW40N60H3FKSA1-ND	Infineon Technologies AG	IGBT 600V 80A 306W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Temporarily Out of Stock	240:$3.4548
IGW40N60H3FKSA1 DISTI # IGW40N60H3FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW40N60H3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$2.0900 2400:$2.0900 960:$2.1900 480:$2.2900 240:$2.3900
IGW40N60H3 DISTI # 726-IGW40N60H3	Infineon Technologies AG	IGBT Transistors 600V 40A 306W RoHS: Compliant	24	1:$4.4600 10:$3.7900 100:$3.2900 250:$3.1200 500:$2.8000
IGW40N60H3FKSA1	Infineon Technologies AG	RoHS: Not Compliant	240	1000:$1.9200 500:$2.0200 100:$2.1100 25:$2.2000 1:$2.3600
IGW40N60H3FKSA1 DISTI # IGW40N60H3	Infineon Technologies AG	600V 80A 306W TO247 RoHS: Compliant	240	1:€5.7500 10:€2.7500 50:€1.7500 100:€1.6800
IGW40N60H3FKSA1 DISTI # XSKDRABV0051858	Infineon Technologies AG	RoHS: Compliant	3510 in Stock0 on Order	3510:$2.8000 240:$3.0000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IGW40N65H5 OMO.#: OMO-IGW40N65H5	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
	Mfr.#: IGW40N65H5FKSA1 OMO.#: OMO-IGW40N65H5FKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IGW40N60H3 OMO.#: OMO-IGW40N60H3	IGBT Transistors 600V 40A 306W
	Mfr.#: IGW40N65H5AXKSA1 OMO.#: OMO-IGW40N65H5AXKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IGW40N60H3FKSA1 OMO.#: OMO-IGW40N60H3FKSA1-INFINEON-TECHNOLOGIES	IGBT 600V 80A 306W TO247-3
	Mfr.#: IGW40N60TP OMO.#: OMO-IGW40N60TP-1190	- Bulk (Alt: IGW40N60TP)
	Mfr.#: IGW40N65H5 OMO.#: OMO-IGW40N65H5-1190	- Bulk (Alt: IGW40N65H5)
	Mfr.#: IGW40N65H5/F5 OMO.#: OMO-IGW40N65H5-F5-1190	नयाँ र मौलिक
	Mfr.#: IGW40N65H5A OMO.#: OMO-IGW40N65H5A-1190	नयाँ र मौलिक
	Mfr.#: IGW40N60H3 OMO.#: OMO-IGW40N60H3-126	IGBT Transistors 600V 40A 306W

उपलब्धता

स्टक:: Available
अर्डर मा:: 4000
मात्रा प्रविष्ट गर्नुहोस्:

IGW40N60H3FKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ३.०४~~; ~~US$ ३.०४~~

10: ~~US$ २.८८~~; ~~US$ २८.८४~~

100: ~~US$ २.७३~~; ~~US$ २७३.२०~~

500: ~~US$ २.५८~~; ~~US$ १ २९०.१०~~

1000: ~~US$ २.४३~~; ~~US$ २ ४२८.४०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

IGW40N60H 3
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IGW4 28
IGW 137

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IGW40N60H3FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes