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SIE802DF-T1-E3

SIE802DF-T1-E3
Mfr. #:
SIE802DF-T1-E3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 30V 60A 10-POLARPAK
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIE802DF-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIE802DF-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SIE802DF-E3
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PolarPAK-10
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
5.2 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
20 ns 10 ns
उदय-समय
195 ns 20 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
42.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
1.9 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
45 ns 65 ns
सामान्य-टर्न-अन-डिले-समय
45 ns 25 ns
च्यानल-मोड
वृद्धि
Tags
SIE80, SIE8, SIE
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0019 Ohms Surface Mount Power Mosfet - PolarPAK
***ical
Trans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R
***p One Stop Global
Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R
***C
Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK
***ponent Sense
TRANS N-CH 30V-TRANSISTOR FET N-CH
***i-Key
MOSFET N-CH 30V 60A 10-POLARPAK
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0026ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.2V ;RoHS Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:202A; Resistance, Rds On:0.0019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Base Number:802; Current, Idm Pulse:100A; N-channel Gate Charge:50nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0019ohm; Resistance, Rds on @ Vgs = 4.5V:0.0026ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Max:3.7V; Voltage, Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
भाग # Mfg। विवरण स्टक मूल्य
SIE802DF-T1-E3
DISTI # V72:2272_09215702		Vishay IntertechnologiesTrans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R
RoHS: Compliant		0
    SIE802DF-T1-E3
    DISTI # SIE802DF-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 60A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 3000:$1.8574
    SIE802DF-T1-E3
    DISTI # SIE802DF-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE802DF-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 18000:$1.6900
    • 30000:$1.6900
    • 6000:$1.7900
    • 12000:$1.7900
    • 3000:$1.8900
    SIE802DF-T1-E3
    DISTI # 781-SIE802DF-T1-E3    		Vishay IntertechnologiesMOSFET 30V 60A 125W 1.9mohm @ 10V
    RoHS: Compliant    		3000
    • 1:$3.7200
    • 10:$3.0800
    • 100:$2.5400
    • 250:$2.4600
    • 500:$2.2000
    • 1000:$1.8600
    • 3000:$1.7600
    SIE802DF-T1-E3Vishay Intertechnologies 1106
      SIE802DF-T1-E3Vishay Semiconductors42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET100
      • 11:$1.8000
      • 4:$2.4000
      • 1:$3.6000
      SIE802DF-T1-E3Vishay Siliconix42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET19
      • 11:$1.8000
      • 4:$2.4000
      • 1:$3.6000
      SIE802DF-T1-E3Vishay IntertechnologiesMOSFET 30V 60A 125W 1.9mohm @ 10VAmericas -
        छवि भाग # विवरण
        SIE802DF-T1-E3

        Mfr.#: SIE802DF-T1-E3

        OMO.#: OMO-SIE802DF-T1-E3

        		 MOSFET 30V 60A 125W 1.9mohm @ 10V
        SIE802DF-T1-GE3

        Mfr.#: SIE802DF-T1-GE3

        OMO.#: OMO-SIE802DF-T1-GE3

        		 MOSFET 30V 202A 125W 1.9mohm @ 10V
        SIE802DF-T1-GE3

        Mfr.#: SIE802DF-T1-GE3

        OMO.#: OMO-SIE802DF-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 30V 202A 125W 1.9mohm @ 10V
        SIE802DF-T1-E3

        Mfr.#: SIE802DF-T1-E3

        OMO.#: OMO-SIE802DF-T1-E3-VISHAY

        		 MOSFET N-CH 30V 60A 10-POLARPAK
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        2000
        मात्रा प्रविष्ट गर्नुहोस्:
        SIE802DF-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ २.६४
        US$ २.६४
        10
        US$ २.५१
        US$ २५.०८
        100
        US$ २.३८
        US$ २३७.६०
        500
        US$ २.२४
        US$ १ १२२.००
        1000
        US$ २.११
        US$ २ ११२.००
        2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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