SI7104DN-T1-GE3

Mfr. #:: SI7104DN-T1-GE3
निर्माता:: Vishay
विवरण:: RF Bipolar Transistors MOSFET 12V 35A 52W 3.7mohm @ 4.5V
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI7104DN-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: VISHAY

उत्पादन कोटि: FETs - एकल

शृङ्खला: SI71xxDx

प्याकेजिङ: रील

अंश-उपनामहरू: SI7104DN-GE3

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: PowerPAK-1212-8

प्रविधि: सि

च्यानलहरूको संख्या: 1 Channel

कन्फिगरेसन: एकल

ट्रान्जिस्टर-प्रकार: 1 N-Channel

Pd-शक्ति-डिसिपेशन: 3.8 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

Vgs-गेट-स्रोत-भोल्टेज: 12 V

आईडी-निरन्तर-नाली-वर्तमान: 26.1 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 12 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 3.7 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

Tags: SI710, SI71, SI7

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7104DN-T1-GE3 विवरण

***ure Electronics: Single N-Channel 12 V 3.8 W 70 nC Silicon Surface Mount Mosfet - POWERPAK-1212-8

***et: Trans MOSFET N-CH 12V 26.1A 8-Pin PowerPAK 1212 T/R

***ark: N-Channel 12-V (D-S) Mosfet

***i-Key: MOSFET N-CH 12V 35A PPAK 1212-8

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI7104DN-T1-GE3 DISTI # SI7104DN-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 12V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.0989
SI7104DN-T1-GE3 DISTI # SI7104DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 26.1A 8-Pin PowerPAK 1212 T/R (Alt: SI7104DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7104DN-T1-GE3 DISTI # SI7104DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 26.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7104DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.0769 6000:$1.0449 12000:$1.0019 18000:$0.9739 30000:$0.9479
SI7104DN-T1-GE3 DISTI # 33P5372	Vishay Intertechnologies	N-CHANNEL 12-V (D-S) MOSFET	0	1:$1.1000 3000:$1.0900 6000:$1.0400 12000:$0.9180
SI7104DN-T1-GE3 DISTI # 781-SI7104DN-GE3	Vishay Intertechnologies	MOSFET 12V 35A 52W 3.7mohm @ 4.5V RoHS: Compliant	0	3000:$1.0000 6000:$0.9630

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI7104DN-T1-E3 OMO.#: OMO-SI7104DN-T1-E3	MOSFET 12V 35A
	Mfr.#: SI7104DN-T1-GE3 OMO.#: OMO-SI7104DN-T1-GE3	MOSFET 12V 35A 52W 3.7mohm @ 4.5V
	Mfr.#: SI7104DN-T1-GE3 OMO.#: OMO-SI7104DN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 12V 35A 52W 3.7mohm @ 4.5V
	Mfr.#: SI7104DN-T1-E3 OMO.#: OMO-SI7104DN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 12V 35A

उपलब्धता

स्टक:: Available
अर्डर मा:: 4500
मात्रा प्रविष्ट गर्नुहोस्:

SI7104DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.४२~~; ~~US$ १.४२~~

10: ~~US$ १.३५~~; ~~US$ १३.५१~~

100: ~~US$ १.२८~~; ~~US$ १२७.९७~~

500: ~~US$ १.२१~~; ~~US$ ६०४.३०~~

1000: ~~US$ १.१४~~; ~~US$ १ १३७.५०~~

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बाट सुरु गर्नुहोस्

SI710 30
SI71 214
SI7 1547

SI7104DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes