SI7112DN-T1-GE3

SI7112DN-T1-GE3
Mfr. #:
SI7112DN-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 30V 11.3A 1212-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7112DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
शृङ्खला
SI71xxDx
प्याकेजिङ
रील
अंश-उपनामहरू
SI7112DN-GE3
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAK-1212-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
1.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
10 ns
उदय-समय
10 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
11.3 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
7.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
65 ns
सामान्य-टर्न-अन-डिले-समय
10 ns
च्यानल-मोड
वृद्धि
Tags
SI7112DN-T, SI7112D, SI7112, SI711, SI71, SI7
Service Guarantees

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R
***ark
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8
***ment14 APAC
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-
***i-Key
MOSFET N-CH 30V 11.3A 1212-8
***nell
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
भाग # Mfg। विवरण स्टक मूल्य
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.7170
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.7913
  • 500:$1.0023
  • 100:$1.2924
  • 10:$1.6350
  • 1:$1.8500
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.7913
  • 500:$1.0023
  • 100:$1.2924
  • 10:$1.6350
  • 1:$1.8500
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7112DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.9749
  • 6000:$0.9459
  • 12000:$0.9069
  • 18000:$0.8819
  • 30000:$0.8579
SI7112DN-T1-GE3
DISTI # 69W7220
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mV, RoHS Compliant: Yes0
  • 1:$2.0900
  • 25:$1.7300
  • 50:$1.5400
  • 100:$1.3400
  • 250:$1.2600
  • 500:$1.1800
  • 1000:$0.9720
SI7112DN-T1-GE3
DISTI # 33P5375
Vishay IntertechnologiesMOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.9920
  • 3000:$0.9850
  • 6000:$0.9380
  • 12000:$0.8310
SI7112DN-T1-GE3
DISTI # 781-SI7112DN-T1-GE3
Vishay IntertechnologiesMOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
RoHS: Compliant
0
  • 1:$2.0900
  • 10:$1.7300
  • 100:$1.3400
  • 500:$1.1800
  • 1000:$0.9720
  • 3000:$0.9050
  • 6000:$0.8720
  • 9000:$0.8710
SI7112DN-T1-GE3
DISTI # 2459429
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8
RoHS: Compliant
0
  • 3000:$3.8500
SI7112DN-T1-GE3
DISTI # 2459429
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK
RoHS: Compliant
0
  • 3000:£0.8540
छवि भाग # विवरण
SI7112DN-T1-E3

Mfr.#: SI7112DN-T1-E3

OMO.#: OMO-SI7112DN-T1-E3

MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
SI7112DN-T1-GE3

Mfr.#: SI7112DN-T1-GE3

OMO.#: OMO-SI7112DN-T1-GE3

MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
SI7112DN-T1-GE3

Mfr.#: SI7112DN-T1-GE3

OMO.#: OMO-SI7112DN-T1-GE3-VISHAY

MOSFET N-CH 30V 11.3A 1212-8
SI7112DN-T1-E3-CUT TAPE

Mfr.#: SI7112DN-T1-E3-CUT TAPE

OMO.#: OMO-SI7112DN-T1-E3-CUT-TAPE-1190

नयाँ र मौलिक
SI7112DN

Mfr.#: SI7112DN

OMO.#: OMO-SI7112DN-1190

नयाँ र मौलिक
SI7112DN-T1

Mfr.#: SI7112DN-T1

OMO.#: OMO-SI7112DN-T1-1190

नयाँ र मौलिक
SI7112DN-T1-E3CT

Mfr.#: SI7112DN-T1-E3CT

OMO.#: OMO-SI7112DN-T1-E3CT-1190

नयाँ र मौलिक
SI7112DN-T1-GE3CT

Mfr.#: SI7112DN-T1-GE3CT

OMO.#: OMO-SI7112DN-T1-GE3CT-1190

नयाँ र मौलिक
SI7112DN-T1-E3

Mfr.#: SI7112DN-T1-E3

OMO.#: OMO-SI7112DN-T1-E3-VISHAY

MOSFET N-CH 30V 11.3A 1212-8
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
SI7112DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.१२
US$ १.१२
10
US$ १.०७
US$ १०.६८
100
US$ १.०१
US$ १०१.२०
500
US$ ०.९६
US$ ४७७.९०
1000
US$ ०.९०
US$ ८९९.५०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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