SI2305CDS-T1-GE3

SI2305CDS-T1-GE3
Mfr. #:
SI2305CDS-T1-GE3
निर्माता:
Vishay
विवरण:
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2305CDS-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI2305CDS-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI2305CDS-GE3
एकाइ - वजन
0.050717 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TO-236-3, SC-59, SOT-23-3
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
SOT-23-3 (TO-236)
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET P- च्यानल, धातु अक्साइड
पावर-अधिकतम
1.7W
ट्रान्जिस्टर-प्रकार
1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
8V
इनपुट-Capacitance-Ciss-Vds
960pF @ 4V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
5.8A (Tc)
Rds-on-max-Id-Vgs
35 mOhm @ 4.4A, 4.5V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
30nC @ 8V
Pd-शक्ति-डिसिपेशन
960 mW
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
20 ns
उदय-समय
20 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
4.4 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 8 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
28 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
40 ns
सामान्य-टर्न-अन-डिले-समय
20 ns
च्यानल-मोड
वृद्धि
Tags
SI2305CDS-T1, SI2305CDS-T, SI2305C, SI2305, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 8 V 0.035 Ohm Surface Mount TrenchFET Power Mosfet - TO-236
***ark
Mosfet, P Channel, -8V, -5.8A, Sot-23-3, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:5.8A; On Resistance Rds(On):0.028Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No
***ment14 APAC
MOSFET, P-CH, 8V, 5.8A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.8A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:960mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.8A; Power Dissipation Pd:960mW; Voltage Vgs Max:8V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
भाग # Mfg। विवरण स्टक मूल्य
SI2305CDS-T1-GE3
DISTI # 24264958
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R
RoHS: Compliant
498000
  • 3000:$0.1471
SI2305CDS-T1-GE3
DISTI # 30604688
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R
RoHS: Compliant
2465
  • 250:$0.1759
  • 100:$0.2155
  • 50:$0.2716
  • 13:$0.4360
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 8V 5.8A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9113In Stock
  • 1000:$0.1530
  • 500:$0.2039
  • 100:$0.2974
  • 10:$0.4330
  • 1:$0.5500
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 8V 5.8A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9113In Stock
  • 1000:$0.1530
  • 500:$0.2039
  • 100:$0.2974
  • 10:$0.4330
  • 1:$0.5500
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 8V 5.8A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 3000:$0.1361
SI2305CDS-T1-GE3
DISTI # C1S803600999635
Vishay IntertechnologiesMOSFETs
RoHS: Compliant
2465
  • 500:$0.1200
  • 250:$0.1380
  • 100:$0.1690
  • 50:$0.2130
  • 10:$0.3420
  • 1:$1.5700
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R (Alt: SI2305CDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 15000
  • 3000:$1.3200
  • 6000:$0.9103
  • 9000:$0.6769
  • 15000:$0.5500
  • 30000:$0.4981
  • 75000:$0.4800
  • 150000:$0.4632
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2305CDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 0
  • 1:$0.1309
  • 30:$0.1259
  • 75:$0.1219
  • 150:$0.1179
  • 375:$0.1139
  • 750:$0.1109
  • 1500:$0.1089
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2305CDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1049
  • 6000:$0.1019
  • 12000:$0.0979
  • 18000:$0.0949
  • 30000:$0.0919
SI2305CDS-T1-GE3
DISTI # 55R1909
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 55R1909)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$0.5010
  • 10:$0.3470
  • 25:$0.3130
  • 50:$0.2770
  • 100:$0.2420
  • 250:$0.2210
  • 500:$0.1980
SI2305CDS-T1-GE3
DISTI # 55R1909
Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -5.8A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.8A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,MSL:-, RoHS Compliant: Yes1325
  • 1:$0.5220
  • 10:$0.3620
  • 25:$0.3250
  • 50:$0.2890
  • 100:$0.2520
  • 250:$0.2300
  • 500:$0.2060
  • 1000:$0.1600
SI2305CDS-T1-GE3.
DISTI # 26AC3314
Vishay IntertechnologiesTRANS MOSFET P-CH 8V 4.4A 3-PIN SOT-23 T/R , ROHS COMPLIANT: NO0
  • 1:$0.1240
  • 3000:$0.1210
  • 6000:$0.1170
  • 12000:$0.1090
  • 18000:$0.1050
  • 30000:$0.1000
SI2305CDS-T1-GE3
DISTI # R1082505
Vishay DaleTRANSITOR,SI2302ADS
RoHS: Compliant
0
  • 20:$0.3200
  • 100:$0.2700
  • 200:$0.2400
  • 400:$0.2200
  • 1000:$0.2100
SI2305CDS-T1-GE3
DISTI # 70459667
Vishay SiliconixSI2305CDS-T1-GE3 P-channel MOSFET Transistor,4.4 A,8 V,3-Pin SOT-23
RoHS: Compliant
0
  • 3000:$0.4310
  • 6000:$0.2850
SI2305CDS-T1-GE3
DISTI # 781-SI2305CDS-GE3
Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SOT-23
RoHS: Compliant
44014
  • 1:$0.4900
  • 10:$0.3330
  • 100:$0.2250
  • 500:$0.1800
  • 1000:$0.1350
  • 3000:$0.1240
  • 6000:$0.1170
  • 9000:$0.1090
  • 24000:$0.1000
SI2305CDS-T1-GE3Vishay IntertechnologiesSingle P-Channel 8 V 0.035 Ohm Surface Mount TrenchFET Power Mosfet - TO-236
RoHS: Compliant
294000Reel
  • 3000:$0.1370
  • 6000:$0.1360
SI2305CDS-T1-GE3Vishay Siliconix4400 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-23684
  • 57:$0.1350
  • 22:$0.1800
  • 1:$0.2400
SI2305CDS-T1-GE3
DISTI # 7103248P
Vishay IntertechnologiesMOSFET P-CHANNEL 8V 4.4A SOT23, RL23420
  • 160:£0.1640
  • 760:£0.1480
  • 1500:£0.1430
SI2305CDS-T1-GE3
DISTI # 7103248
Vishay IntertechnologiesMOSFET P-CHANNEL 8V 4.4A SOT23, PK880
  • 20:£0.2590
  • 160:£0.1640
  • 760:£0.1480
  • 1500:£0.1430
SI2305CDS-T1-GE3
DISTI # XSFP00000027022
Vishay Siliconix 
RoHS: Compliant
484493
  • 3000:$0.2740
  • 484493:$0.2491
SI2305CDS-T1-GE3
DISTI # 1779258
Vishay IntertechnologiesMOSFET, P-CH, 8V, 5.8A, SOT23
RoHS: Compliant
76584
  • 5:£0.2960
  • 25:£0.2420
  • 100:£0.1880
  • 250:£0.1720
  • 500:£0.1560
SI2305CDS-T1-GE3
DISTI # 1779258RL
Vishay IntertechnologiesMOSFET, P-CH, 8V, 5.8A, SOT23
RoHS: Compliant
0
  • 1:$0.7750
  • 10:$0.5280
  • 100:$0.3560
  • 500:$0.2850
  • 1000:$0.2140
  • 3000:$0.1970
  • 6000:$0.1850
  • 9000:$0.1730
SI2305CDS-T1-GE3
DISTI # 1779258
Vishay IntertechnologiesMOSFET, P-CH, 8V, 5.8A, SOT23
RoHS: Compliant
54500
  • 1:$0.7750
  • 10:$0.5280
  • 100:$0.3560
  • 500:$0.2850
  • 1000:$0.2140
  • 3000:$0.1970
  • 6000:$0.1850
  • 9000:$0.1730
SI2305CDS-T1-GE3Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SOT-23
RoHS: Compliant
Americas - 54000
    छवि भाग # विवरण
    SI2305CDS-T1-GE3

    Mfr.#: SI2305CDS-T1-GE3

    OMO.#: OMO-SI2305CDS-T1-GE3

    MOSFET -8V Vds 8V Vgs SOT-23
    SI2305CDS

    Mfr.#: SI2305CDS

    OMO.#: OMO-SI2305CDS-1190

    नयाँ र मौलिक
    SI2305CDS-T1-GE3

    Mfr.#: SI2305CDS-T1-GE3

    OMO.#: OMO-SI2305CDS-T1-GE3-VISHAY

    नयाँ र मौलिक
    SI2305CDS-T1-GE3/N5

    Mfr.#: SI2305CDS-T1-GE3/N5

    OMO.#: OMO-SI2305CDS-T1-GE3-N5-1190

    नयाँ र मौलिक
    SI2305CDS-TI-GE3

    Mfr.#: SI2305CDS-TI-GE3

    OMO.#: OMO-SI2305CDS-TI-GE3-1190

    नयाँ र मौलिक
    SI2305CDS-T1-GE3-CUT TAPE

    Mfr.#: SI2305CDS-T1-GE3-CUT TAPE

    OMO.#: OMO-SI2305CDS-T1-GE3-CUT-TAPE-1190

    नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5000
    मात्रा प्रविष्ट गर्नुहोस्:
    SI2305CDS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.१३
    US$ ०.१३
    10
    US$ ०.१३
    US$ १.२६
    100
    US$ ०.१२
    US$ ११.९२
    500
    US$ ०.११
    US$ ५६.३०
    1000
    US$ ०.११
    US$ १०६.००
    बाट सुरु गर्नुहोस्
    Top