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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SI9926BDY-T1-GE3 DISTI # SI9926BDY-T1-GE3-ND | Vishay Siliconix | MOSFET 2N-CH 20V 6.2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI9926BDY-T1-GE3 DISTI # 26R1950 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 20V, 6.2A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes | 0 |
|
| SI9926BDY-T1-GE3 DISTI # 781-SI9926BDY-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3 RoHS: Compliant | 0 |
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SI9926BDY-T1-E3 OMO.#: OMO-SI9926BDY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3 |
|
Mfr.#: SI9926BD OMO.#: OMO-SI9926BD-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SI9926BDY OMO.#: OMO-SI9926BDY-1190 |
MOSFET NCH DUAL MOSFET 2.5V (G-S) |
|
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Mfr.#: SI9926BDY-T1 OMO.#: OMO-SI9926BDY-T1-1190 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: SI9926BDY-T1-E3 OMO.#: OMO-SI9926BDY-T1-E3-VISHAY |
MOSFET 2N-CH 20V 6.2A 8-SOIC |
|
|
Mfr.#: SI9926BDY-T1-E3. OMO.#: OMO-SI9926BDY-T1-E3--1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SI9926BDY-T1-GE3 OMO.#: OMO-SI9926BDY-T1-GE3-VISHAY |
MOSFET 2N-CH 20V 6.2A 8-SOIC |
|
|
Mfr.#: SI9926BDYT1E3 OMO.#: OMO-SI9926BDYT1E3-1190 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |