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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SI4160DY-T1-GE3 DISTI # V72:2272_09215537 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2915 |
|
| SI4160DY-T1-GE3 DISTI # V36:1790_09215537 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1302In Stock |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1302In Stock |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI4160DY-T1-GE3 DISTI # 25789831 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2915 |
|
| SI4160DY-T1-GE3 DISTI # 31043808 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 25000 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4160DY-T1-GE3 DISTI # 05W6940 | Vishay Intertechnologies | MOSFET, N CHANNEL, 30V, 25.4A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 |
|
| SI4160DY-T1-GE3. DISTI # 15AC0296 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:5.7W,No. of Pins:8Pins RoHS Compliant: Yes | 27500 |
|
| SI4160DY-T1-GE3 DISTI # 781-SI4160DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | 2392 |
|
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 1776 | ||
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 140 | ||
| SI4160DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | Americas - 2500 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SI4836DY-T1-E3 OMO.#: OMO-SI4836DY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI4838BDY-GE3 |
|
Mfr.#: SI4770-A-EVB OMO.#: OMO-SI4770-A-EVB |
RF Development Tools Si4770 Evaluation Board. 40p QFN 6x6x0.85 |
|
Mfr.#: SI4384DY-T1-GE3 OMO.#: OMO-SI4384DY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 15A 3.1W 8.5mohm @ 10V |
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Mfr.#: SI4110DY OMO.#: OMO-SI4110DY-1190 |
नयाँ र मौलिक |
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Mfr.#: SI4164DY-T1-E3 OMO.#: OMO-SI4164DY-T1-E3-1190 |
नयाँ र मौलिक |
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Mfr.#: SI4214D OMO.#: OMO-SI4214D-1190 |
नयाँ र मौलिक |
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Mfr.#: SI4410DY-TI-E3 OMO.#: OMO-SI4410DY-TI-E3-1190 |
नयाँ र मौलिक |
|
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Mfr.#: SI4700-B15 OMO.#: OMO-SI4700-B15-1190 |
नयाँ र मौलिक |
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Mfr.#: SI4838BDY-T1-GE3 OMO.#: OMO-SI4838BDY-T1-GE3-VISHAY |
MOSFET N-CH 12V 34A 8-SOIC |
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|
Mfr.#: SI4842B OMO.#: OMO-SI4842B-1190 |
नयाँ र मौलिक |