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STU80N4F6

STU80N4F6
Mfr. #:
STU80N4F6
निर्माता:
STMicroelectronics
विवरण:
MOSFET N CH 40V 80A IPAK
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STU80N4F6 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STU80N4F6 थप जानकारी STU80N4F6 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
N- च्यानल STripFET
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.139332 oz
माउन्टिङ-शैली
प्वाल मार्फत
ट्रेडनेम
स्ट्रिपफेट
प्याकेज-केस
IPAK-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
70 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
11.9 ns
उदय-समय
7.6 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
80 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
40 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
4 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
5.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
46.1 ns
सामान्य-टर्न-अन-डिले-समय
10.5 ns
Qg-गेट-चार्ज
36 nC
च्यानल-मोड
वृद्धि
Tags
STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 40 V, 5.8 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***Yang
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET - Bulk
***ser
MOSFETs 30V N-Channel PowerTrench
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(3+Tab) IPAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50Volts C0G +/-0.50pF
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 30V, 75A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 75A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
NFET DPAK 30V 76A 6MOHM - Rail/Tube
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
STU80N4F6
DISTI # 30615503		STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 33:$0.7625
STU80N4F6
DISTI # 497-13657-5-ND		STMicroelectronicsMOSFET N CH 40V 80A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2377In Stock
  • 525:$1.0841
  • 150:$1.3195
  • 75:$1.5488
  • 10:$1.6420
  • 1:$1.8300
STU80N4F6
DISTI # C1S730200785376		STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 50:$0.6030
  • 1:$0.6100
STU80N4F6
DISTI # 89W1526		STMicroelectronicsPTD LOW VOLTAGE0
  • 5000:$0.7670
  • 2500:$0.7910
  • 1000:$0.9800
  • 500:$1.1000
  • 100:$1.1800
  • 10:$1.4700
  • 1:$1.7300
STU80N4F6
DISTI # 511-STU80N4F6		STMicroelectronicsMOSFET N-Ch 40 V 5.8 mOhm 80 A STripFET(TM)
RoHS: Compliant		2887
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1800
  • 500:$1.0400
  • 1000:$0.8560
  • 3000:$0.7970
  • 6000:$0.7680
  • 9000:$0.7380
छवि भाग # विवरण
STU8NM60ND

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OMO.#: OMO-STU8NM60ND

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STU80N4F6

Mfr.#: STU80N4F6

OMO.#: OMO-STU80N4F6-STMICROELECTRONICS

 MOSFET N CH 40V 80A IPAK
STU816S

Mfr.#: STU816S

OMO.#: OMO-STU816S-1190

 नयाँ र मौलिक
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Mfr.#: STU83003

OMO.#: OMO-STU83003-1190

 Power Bipolar Transistors (Alt: STU83003)
STU8438CU

Mfr.#: STU8438CU

OMO.#: OMO-STU8438CU-1190

 नयाँ र मौलिक
STU8N65M5

Mfr.#: STU8N65M5

OMO.#: OMO-STU8N65M5-STMICROELECTRONICS

 MOSFET N-CH 650V 7A IPAK
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Mfr.#: STU8N80K5

OMO.#: OMO-STU8N80K5-STMICROELECTRONICS

 MOSFET N CH 800V 6A IPAK
STU8NA80

Mfr.#: STU8NA80

OMO.#: OMO-STU8NA80-1190

 नयाँ र मौलिक
STU8NM50N

Mfr.#: STU8NM50N

OMO.#: OMO-STU8NM50N-STMICROELECTRONICS

 MOSFET N-CH 500V 5A IPAK
STU8NM60ND

Mfr.#: STU8NM60ND

OMO.#: OMO-STU8NM60ND-STMICROELECTRONICS

 MOSFET N-CH 600V 7A IPAK
उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
STU80N4F6 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.००
US$ ०.००
10
US$ ०.००
US$ ०.००
100
US$ ०.००
US$ ०.००
500
US$ ०.००
US$ ०.००
1000
US$ ०.००
US$ ०.००
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