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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| IPI147N12N3GAKSA1 DISTI # V99:2348_06384034 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 155 |
|
| IPI147N12N3GAKSA1 DISTI # V36:1790_06384034 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 0 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 56A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI147N12N3GAKSA1 DISTI # 26197739 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 155 |
|
| IPI147N12N3 G DISTI # IPI147N12N3G | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin TO-262 Tube - Bulk (Alt: IPI147N12N3G) RoHS: Compliant Min Qty: 511 Container: Bulk | Americas - 0 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI147N12N3GAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI147N12N3GAKSA1) RoHS: Compliant Min Qty: 521 Container: Bulk | Americas - 0 |
|
| IPI147N12N3GAKSA1 DISTI # SP000652744 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 (Alt: SP000652744) RoHS: Compliant Min Qty: 50 | Europe - 0 |
|
| IPI147N12N3 G DISTI # 726-IPI147N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 RoHS: Compliant | 840 |
|
| IPI147N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 15175 |
|
| IPI147N12N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 14000 |
|
| IPI147N12N3GAKSA1 | Infineon Technologies AG | 490 |
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: IPI147N12N3 G OMO.#: OMO-IPI147N12N3-G |
MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI147N12N3GAKSA1 |
MOSFET N-CH 120V 56A TO262-3 |
|
Mfr.#: IPI147N12N3G OMO.#: OMO-IPI147N12N3G-1190 |
Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: IPI147N12N3 G OMO.#: OMO-IPI147N12N3-G-124 |
Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 |
