SIZ710DT-T1-GE3

Mfr. #:: SIZ710DT-T1-GE3
निर्माता:: Vishay
विवरण:: MOSFET 2N-CH 20V 16A POWERPAIR
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIZ710DT-T1-GE3 डाटा पाना
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थप जानकारी:: SIZ710DT-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - arrays

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SIZ710DT-GE3

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 6-PowerPair

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 6-PowerPair

कन्फिगरेसन: दोहोरो

FET-प्रकार: 2 N-Channel (Half Bridge)

पावर-अधिकतम: 27W, 48W

ट्रान्जिस्टर-प्रकार: 2 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 20V

इनपुट-Capacitance-Ciss-Vds: 820pF @ 10V

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 16A, 35A

Rds-on-max-Id-Vgs: 6.8 mOhm @ 19A, 10V

Vgs-th-max-Id: 2.2V @ 250μA

गेट-चार्ज-Qg-Vgs: 18nC @ 10V

Pd-शक्ति-डिसिपेशन: 27 W 48 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

Vgs-गेट-स्रोत-भोल्टेज: +/- 20 V

आईडी-निरन्तर-नाली-वर्तमान: 16 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 20 V

Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज: 1 V to 2.2 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 5.5 mOhms 2.7 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

Qg-गेट-चार्ज: 11.5 nC 38 nC

फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम: 45 S 85 S

Tags: SIZ710DT-T, SIZ71, SIZ7, SiZ

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ710DT-T1-GE3 विवरण

***ure Electronics: Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm

***et Europe: Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R

***ark: MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V

***ment14 APAC: MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W

SIZ710DT-T1-GE3 थप जानकारी

Dual N-Channel TrenchFET® Power MOSFETs: Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SIZ710DT-T1-GE3 DISTI # V72:2272_09216120	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R RoHS: Compliant	2000	1000:$0.6544 500:$0.7412 250:$0.8087 100:$0.8367 25:$0.9213 10:$1.0236 1:$1.1931
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.6622
SIZ710DT-T1-GE3 DISTI # 30150542	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R RoHS: Compliant	2000	1000:$0.6544 500:$0.7412 250:$0.8087 100:$0.8367 25:$0.9213 12:$1.0236
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.6596 6000:$0.5074 9000:$0.4039 15000:$0.3412 30000:$0.3141 75000:$0.3044 150000:$0.2954
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.2499 6000:€0.8959 12000:€0.7269 18000:€0.6429 30000:€0.6149
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.6249 6000:$0.6069 12000:$0.5819 18000:$0.5659 30000:$0.5509
SIZ710DT-T1-GE3 DISTI # 83T3536	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.5100 25:$1.2400 50:$1.1000 100:$0.9510 250:$0.8850 500:$0.8180 1000:$0.7190
SIZ710DT-T1-GE3 DISTI # 65T1676	Vishay Intertechnologies	MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes	0	1:$0.6370 3000:$0.6330 6000:$0.6020 12000:$0.5340
SIZ710DT-T1-GE3 DISTI # 781-SIZ710DT-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 RoHS: Compliant	378	1:$1.5100 10:$1.2400 100:$0.9510 500:$0.8180 1000:$0.7190 3000:$0.7170
SIZ710DT-T1-GE3 DISTI # C1S803601344629	Vishay Intertechnologies	MOSFETs	2000	250:$0.8087 100:$0.8367 25:$0.9213 10:$1.0236
SIZ710DT-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7	Americas -
SIZ710DT-T1-GE3 DISTI # 2129099	Vishay Intertechnologies	MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA RoHS: Compliant	0	3000:£0.6370

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SIZ710DT-T1-GE3 OMO.#: OMO-SIZ710DT-T1-GE3	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
	Mfr.#: SIZ710DT-T1 OMO.#: OMO-SIZ710DT-T1-1190	नयाँ र मौलिक
	Mfr.#: SIZ710DT OMO.#: OMO-SIZ710DT-1190	नयाँ र मौलिक
	Mfr.#: SIZ710DT-T1-GE OMO.#: OMO-SIZ710DT-T1-GE-1190	नयाँ र मौलिक
	Mfr.#: SIZ710DT-T1-GE3 OMO.#: OMO-SIZ710DT-T1-GE3-VISHAY	MOSFET 2N-CH 20V 16A POWERPAIR

उपलब्धता

स्टक:: Available
अर्डर मा:: 4000
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SIZ710DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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मात्रा
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बाट सुरु गर्नुहोस्

SIZ710DT-T 3
SIZ71 4
SIZ7 19
SiZ 92

SIZ710DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes