BSC014N04LSIATMA1

BSC014N04LSIATMA1
Mfr. #:
BSC014N04LSIATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CH 40V 100A TDSON-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC014N04LSIATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSC014N04LSIATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
OptiMOS
प्याकेजिङ
रील
अंश-उपनामहरू
BSC014N04LSI SP000953212
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
OptiMOS
प्याकेज-केस
TDSON-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल क्वाड ड्रेन ट्रिपल स्रोत
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
96 W
आईडी-निरन्तर-नाली-वर्तमान
100 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
40 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
1.45 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Qg-गेट-चार्ज
55 nC
Tags
BSC014N04, BSC014N0, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R
***ical
Power-MOSFET, 40V
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
40V OptiMOS™ Power MOSFETs
Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More
भाग # Mfg। विवरण स्टक मूल्य
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
20000In Stock
  • 5000:$1.4734
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N04LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.2900
  • 10000:$1.1900
  • 20000:$1.1900
  • 30000:$1.0900
  • 50000:$1.0900
BSC014N04LSIATMA1
DISTI # SP000953212
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R (Alt: SP000953212)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€1.9139
  • 10000:€1.4899
  • 20000:€1.2389
  • 30000:€1.1559
  • 50000:€1.0989
BSC014N04LSIATMA1
DISTI # 50Y1798
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.7500
  • 500:$2.0900
  • 250:$2.2100
  • 100:$2.3400
  • 50:$2.5200
  • 25:$2.7000
  • 10:$2.8900
  • 1:$3.3600
BSC014N04LSI
DISTI # 726-BSC014N04LSI
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
18687
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 726-BSC014N04LSIATMA
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
110
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 500:£1.2400
  • 250:£1.3300
  • 100:£1.4200
  • 10:£1.7700
  • 1:£2.3600
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
BSC014N04LSIATMA1
DISTI # 2480707RL
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
छवि भाग # विवरण
BSC014N04LSATMA1

Mfr.#: BSC014N04LSATMA1

OMO.#: OMO-BSC014N04LSATMA1

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSC014N06NSATMA1

Mfr.#: BSC014N06NSATMA1

OMO.#: OMO-BSC014N06NSATMA1

MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
BSC014N03MS G

Mfr.#: BSC014N03MS G

OMO.#: OMO-BSC014N03MS-G

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSC014N03MSGATMA1

Mfr.#: BSC014N03MSGATMA1

OMO.#: OMO-BSC014N03MSGATMA1

MOSFET LV POWER MOS
BSC014N03LS G

Mfr.#: BSC014N03LS G

OMO.#: OMO-BSC014N03LS-G-1190

Trans MOSFET N-CH 30V 34A 8-Pin TDSON EP
BSC014N03MSGATMA1

Mfr.#: BSC014N03MSGATMA1

OMO.#: OMO-BSC014N03MSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 100A TDSON-8
BSC014N04LSI

Mfr.#: BSC014N04LSI

OMO.#: OMO-BSC014N04LSI-1190

Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP
BSC014N06NSATMA1

Mfr.#: BSC014N06NSATMA1

OMO.#: OMO-BSC014N06NSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 30A TDSON-8
BSC014N06NSTATMA1

Mfr.#: BSC014N06NSTATMA1

OMO.#: OMO-BSC014N06NSTATMA1-INFINEON-TECHNOLOGIES

DIFFERENTIATED MOSFETS
BSC014N04LSIATMA1

Mfr.#: BSC014N04LSIATMA1

OMO.#: OMO-BSC014N04LSIATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 100A TDSON-8
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
BSC014N04LSIATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.६४
US$ १.६४
10
US$ १.५५
US$ १५.५३
100
US$ १.४७
US$ १४७.१५
500
US$ १.३९
US$ ६९४.९०
1000
US$ १.३१
US$ १ ३०८.००
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