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SIHG30N60E-E3

SIHG30N60E-E3
Mfr. #:
SIHG30N60E-E3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET N-Channel 600V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHG30N60E-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHG30N60E-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SIHG30N60E, SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
***ure Electronics
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-247AC
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
***o-Tech
MOSFET N-Channel 600V 29A TO247AC
***nell
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHG30N60E-E3
DISTI # SIHG30N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO247AC
Min Qty: 1
Container: Tube		499In Stock
  • 100:$4.4850
  • 25:$5.1752
  • 10:$5.4740
  • 1:$6.1000
SIHG30N60E-E3
DISTI # SIHG30N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG30N60E-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$2.8900
  • 3000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
  • 500:$3.2900
SIHG30N60E-E3
DISTI # 781-SIHG30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		327
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$4.1900
  • 1000:$3.5900
  • 2500:$3.0500
SIHG30N60E-GE3
DISTI # 78-SIHG30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		25
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
SIHG30N60E-E3Vishay Intertechnologies 100
    छवि भाग # विवरण
    SIHG30N60E-E3

    Mfr.#: SIHG30N60E-E3

    OMO.#: OMO-SIHG30N60E-E3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG30N60E-GE3

    Mfr.#: SIHG30N60E-GE3

    OMO.#: OMO-SIHG30N60E-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG30N60AEL-GE3

    Mfr.#: SIHG30N60AEL-GE3

    OMO.#: OMO-SIHG30N60AEL-GE3

    		 MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
    SIHG30N60E-E3

    Mfr.#: SIHG30N60E-E3

    OMO.#: OMO-SIHG30N60E-E3-VISHAY

    		 RF Bipolar Transistors MOSFET N-Channel 600V
    SIHG30N60AEL-GE3

    Mfr.#: SIHG30N60AEL-GE3

    OMO.#: OMO-SIHG30N60AEL-GE3-VISHAY

    		 MOSFET N-CHAN 600V TO-247AC
    SIHG30N60E

    Mfr.#: SIHG30N60E

    OMO.#: OMO-SIHG30N60E-1190

    		 नयाँ र मौलिक
    SIHG30N60E-GE3

    Mfr.#: SIHG30N60E-GE3

    OMO.#: OMO-SIHG30N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 29A TO247AC
    SIHG30N60EGE3

    Mfr.#: SIHG30N60EGE3

    OMO.#: OMO-SIHG30N60EGE3-1190

    		 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHG30N60E-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४.३४
    US$ ४.३४
    10
    US$ ४.१२
    US$ ४१.१८
    100
    US$ ३.९०
    US$ ३९०.१५
    500
    US$ ३.६८
    US$ १ ८४२.४०
    1000
    US$ ३.४७
    US$ ३ ४६८.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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