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S25FL128SAGBHVC03

S25FL128SAGBHVC03
Mfr. #:
S25FL128SAGBHVC03
निर्माता:
Cypress Semiconductor
विवरण:
IC 128 MB FLASH MEMORY FL-S
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
S25FL128SAGBHVC03 डाटा पाना
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S25FL128SAGBHVC03 थप जानकारी S25FL128SAGBHVC03 Product Details
उत्पादन विशेषता
विशेषता मान
Tags
S25FL128SAGBHV, S25FL128SAGB, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC 128 MB FLASH MEMORY
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
भाग # Mfg। विवरण स्टक मूल्य
S25FL128SAGBHVC03
DISTI # S25FL128SAGBHVC03-ND		Cypress SemiconductorIC 128 MB FLASH MEMORY
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$2.6528
S25FL128SAGBHVC03
DISTI # 727-S25FL128SAGBVC03		Cypress SemiconductorNOR Flash IC 128 Mb FLASH MEMORY
RoHS: Compliant		0
  • 2500:$2.3100
छवि भाग # विवरण
S25FL128SDSNFI000

Mfr.#: S25FL128SDSNFI000

OMO.#: OMO-S25FL128SDSNFI000

 NOR Flash Nor
S25FL128LAGBHV030

Mfr.#: S25FL128LAGBHV030

OMO.#: OMO-S25FL128LAGBHV030

 NOR Flash 128MB F-L NOR Flash 133MHZ BGA
S25FL128SAGMFVG00

Mfr.#: S25FL128SAGMFVG00

OMO.#: OMO-S25FL128SAGMFVG00

 NOR Flash Nor
S25FL128SDPBHVC03

Mfr.#: S25FL128SDPBHVC03

OMO.#: OMO-S25FL128SDPBHVC03

 NOR Flash Nor
S25FL128SDPBHB213

Mfr.#: S25FL128SDPBHB213

OMO.#: OMO-S25FL128SDPBHB213-CYPRESS-SEMICONDUCTOR

 IC NOR Automotive, AEC-Q100, FL-S
S25FL128SDSBHA210

Mfr.#: S25FL128SDSBHA210

OMO.#: OMO-S25FL128SDSBHA210-CYPRESS-SEMICONDUCTOR

 IC 128 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL128P0XMFI011

Mfr.#: S25FL128P0XMFI011

OMO.#: OMO-S25FL128P0XMFI011-CYPRESS-SEMICONDUCTOR

 IC FLASH 128M SPI 104MHZ 16SOIC
S25FL128POXMFI001

Mfr.#: S25FL128POXMFI001

OMO.#: OMO-S25FL128POXMFI001-1190

 नयाँ र मौलिक
S25FL128SAGMFI003J

Mfr.#: S25FL128SAGMFI003J

OMO.#: OMO-S25FL128SAGMFI003J-1190

 नयाँ र मौलिक
S25FL128SAIF01

Mfr.#: S25FL128SAIF01

OMO.#: OMO-S25FL128SAIF01-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
S25FL128SAGBHVC03 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.००
US$ ०.००
10
US$ ०.००
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100
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500
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1000
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US$ ०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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