IXTY1N120P

Mfr. #:: IXTY1N120P
निर्माता:: IXYS
विवरण:: MOSFET N-CH 1200V 1A TO-252
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IXTY1N120P डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

Tags: IXTY1N1, IXTY1N, IXTY1, IXTY, IXT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Vacuum Packaging with PL

Step2:
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IXTY1N120P विवरण

*** Electronics: MOSFET N-CH 1200V 1A TO-252

***et: TRANS MOSFET N-CH 500V 1.1A 3PIN DPAK

***ser: MOSFETs 500V N-Channel QFET

***et: Transistor MOSFET N-Channel 900V 5.1A 3-Pin TO-252

*** Stop Electro: Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

***icroelectronics: N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package

***r Electronics: Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: FPGA Cyclone® III Family 15408 Cells 437.5MHz 65nm Technology 1.2V Automotive 256-Pin UFBGA

***nell: MOSFET, N-CH, 1.05KV, 1.5A, 60W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 1.05kV; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***icroelectronics: N-channel 950 V, 2 Ohm typ., 3.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package

***ure Electronics: Single N-Channel 950 V 2.5 Ohm 70 W Surface Mount Power Mosfet - DPAK-3

***r Electronics: Power Field-Effect Transistor, 3.5A I(D), 950V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***icroelectronics: N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package

***ical: Trans MOSFET N-CH 950V 2A 3-Pin(2+Tab) DPAK T/R

*** Electronic Components: MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected

***enic: 950V 2A 45W 5´Î@10V1A 5V@100Ã×A N Channel TO-252-3 MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 2A I(D), 950V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N-CH, 950V, 2A, 150DEG C, 45W;

***ical: Trans MOSFET N-CH 600V 0.9A 3-Pin(2+Tab) DPAK T/R

***et: N-CH/600V/0.9A/12OHM/SUBSTITUTE OF SSR1N60ATM

***r Electronics: Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IXTY1N120P DISTI # IXTY1N120P-ND	IXYS Corporation	MOSFET N-CH 1200V 1A TO-252 RoHS: Compliant Min Qty: 140 Container: Tube	Temporarily Out of Stock	140:$1.9125

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IXTY1R4N120P-TRL OMO.#: OMO-IXTY1R4N120P-TRL	Discrete Semiconductor Modules Polar Power MOSFET
	Mfr.#: IXTY1R6N100D2 OMO.#: OMO-IXTY1R6N100D2	MOSFET N-CH MOSFETS (D2) 1000V 1.6A
	Mfr.#: IXTY12N06T OMO.#: OMO-IXTY12N06T	MOSFET 12 Amps 6V
	Mfr.#: IXTY1R6N50D2TRL OMO.#: OMO-IXTY1R6N50D2TRL-1190	नयाँ र मौलिक
	Mfr.#: IXTY1N120P OMO.#: OMO-IXTY1N120P-IXYS-CORPORATION	MOSFET N-CH 1200V 1A TO-252
	Mfr.#: IXTY1R4N120PHV OMO.#: OMO-IXTY1R4N120PHV-IXYS-CORPORATION	MOSFET N-CH
	Mfr.#: IXTY18P10T TRL OMO.#: OMO-IXTY18P10T-TRL-1190	IXTY18P10T TRL
	Mfr.#: IXTY18P10T OMO.#: OMO-IXTY18P10T-IXYS-CORPORATION	IGBT Transistors MOSFET -100V -18A
	Mfr.#: IXTY1N100P OMO.#: OMO-IXTY1N100P-IXYS-CORPORATION	MOSFET 1 Amps 1000V 14 Rds
	Mfr.#: IXTY15N20T OMO.#: OMO-IXTY15N20T-IXYS-CORPORATION	MOSFET 15 Amps 200V 180 Rds

उपलब्धता

स्टक:: Available
अर्डर मा:: 1000
मात्रा प्रविष्ट गर्नुहोस्:

IXTY1N120P को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.८७~~; ~~US$ २.८७~~

10: ~~US$ २.७३~~; ~~US$ २७.२५~~

100: ~~US$ २.५८~~; ~~US$ २५८.१९~~

500: ~~US$ २.४४~~; ~~US$ १ २१९.२०~~

1000: ~~US$ २.३०~~; ~~US$ २ २९५.००~~

बाट सुरु गर्नुहोस्

IXTY1N1 4
IXTY1N 7
IXTY1 27
IXTY 88
IXT 1385

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More Newest Products

IXTY1N120P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes