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SI4100DY-T1-GE3

SI4100DY-T1-GE3
Mfr. #:
SI4100DY-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 100V 6.8A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4100DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI4100DY-GE3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SOIC-Narrow-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
2.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
10 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
4.4 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
4.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
63 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
12 ns 15 ns
सामान्य-टर्न-अन-डिले-समय
15 ns 10 ns
Qg-गेट-चार्ज
13.5 nC
च्यानल-मोड
वृद्धि
Tags
SI4100DY-T1, SI4100DY-T, SI4100DY, SI4100D, SI4100, Si410, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4100DY-T1-GE3 N-channel MOSFET Transistor; 6.8 A; 100 V; 8-Pin SOIC
***et
Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
***ure Electronics
Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8
***nell
MOSFET, N-CH, 100V, 6.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.8A; Power Dissipation Pd:6W; Voltage Vgs Max:20V
भाग # Mfg। विवरण स्टक मूल्य
SI4100DY-T1-GE3
DISTI # V72:2272_09216442		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
RoHS: Compliant		7330
  • 6000:$0.5445
  • 3000:$0.5502
  • 1000:$0.5566
  • 500:$0.6236
  • 250:$0.7096
  • 100:$0.7174
  • 25:$0.8901
  • 10:$0.9008
  • 1:$1.0457
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2220In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2220In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 6.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.5852
SI4100DY-T1-GE3
DISTI # 26723074		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
RoHS: Compliant		7330
  • 6000:$0.5445
  • 3000:$0.5502
  • 1000:$0.5566
  • 500:$0.6236
  • 250:$0.7096
  • 100:$0.7174
  • 25:$0.8901
  • 14:$0.9008
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R (Alt: SI4100DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.6829
  • 5000:€0.4659
  • 10000:€0.4009
  • 15000:€0.3699
  • 25000:€0.3439
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4100DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5409
  • 5000:$0.5249
  • 10000:$0.5039
  • 15000:$0.4899
  • 25000:$0.4769
SI4100DY-T1-GE3
DISTI # SI4100DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R (Alt: SI4100DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4100DY-T1-GE3
    DISTI # 15R4959    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 6.8 A, 100 V, 51 mohm, 10 V, 2 V0
    • 1:$0.6310
    • 2500:$0.6010
    • 5000:$0.5630
    • 7500:$0.5320
    SI4100DY-T1-GE3
    DISTI # 55R1914    		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 6.8A, SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes4565
    • 1:$1.3300
    • 10:$1.1000
    • 25:$1.0100
    • 50:$0.9270
    • 100:$0.8400
    • 250:$0.7820
    • 500:$0.7230
    SI4100DY-T1-GE3
    DISTI # 70616169    		Vishay SiliconixSI4100DY-T1-GE3 N-channel MOSFET Transistor,6.8 A,100 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 100:$0.6700
    • 200:$0.6570
    • 500:$0.6370
    • 1000:$0.6100
    • 2500:$0.5700
    SI4100DY-T1-GE3
    DISTI # 781-SI4100DY-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
    RoHS: Compliant    		1251
    • 1:$1.3300
    • 10:$1.1000
    • 100:$0.8400
    • 500:$0.7230
    • 1000:$0.6350
    • 2500:$0.6340
    SI4100DY-T1-GE3
    DISTI # SI4100DY-GE3    		Vishay IntertechnologiesN-Ch 100V 6,8A 2,5W 0,063R SO8
    RoHS: Not Compliant    		2200
    • 50:€0.4120
    • 100:€0.3520
    • 500:€0.3220
    • 2500:€0.3115
    SI4100DY-T1-GE3
    DISTI # 1779251    		Vishay IntertechnologiesMOSFET, N-CH, 100V, 6.8A, SO8
    RoHS: Compliant    		4565
    • 1:$2.1000
    • 10:$1.7500
    • 100:$1.3400
    • 500:$1.1500
    • 1000:$1.0100
    • 2500:$1.0100
    SI4100DY-T1-GE3
    DISTI # 1779251RL    		Vishay IntertechnologiesMOSFET, N-CH, 100V, 6.8A, SO8
    RoHS: Compliant    		0
    • 1:$2.1000
    • 10:$1.7500
    • 100:$1.3400
    • 500:$1.1500
    • 1000:$1.0100
    • 2500:$1.0100
    SI4100DY-T1-GE3
    DISTI # C1S803605110808    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
    RoHS: Not Compliant    		7330
    • 250:$0.7096
    • 100:$0.7174
    • 25:$0.8901
    • 10:$0.9008
    SI4100DY-T1-GE3
    DISTI # XSFP00000138693    		Vishay Siliconix 
    RoHS: Compliant    		30285
    • 2500:$1.0000
    • 30285:$0.9091
    SI4100DY-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas -
      SI4100DY-T1-GE3
      DISTI # 1779251      		Vishay IntertechnologiesMOSFET, N-CH, 100V, 6.8A, SO8
      RoHS: Compliant      		4565
      • 5:£1.0300
      • 25:£0.8870
      • 100:£0.6770
      • 250:£0.6310
      • 500:£0.5830
      छवि भाग # विवरण
      SI4100DY-T1-E3

      Mfr.#: SI4100DY-T1-E3

      OMO.#: OMO-SI4100DY-T1-E3

      		 MOSFET 100V Vds 20V Vgs SO-8
      SI4100DY-T1-GE3

      Mfr.#: SI4100DY-T1-GE3

      OMO.#: OMO-SI4100DY-T1-GE3

      		 MOSFET 100V Vds 20V Vgs SO-8
      SI4100D

      Mfr.#: SI4100D

      OMO.#: OMO-SI4100D-1190

      		 नयाँ र मौलिक
      SI4100DY

      Mfr.#: SI4100DY

      OMO.#: OMO-SI4100DY-1190

      		 नयाँ र मौलिक
      SI4100DY-T1

      Mfr.#: SI4100DY-T1

      OMO.#: OMO-SI4100DY-T1-1190

      		 नयाँ र मौलिक
      SI4100DY-T1-E3

      Mfr.#: SI4100DY-T1-E3

      OMO.#: OMO-SI4100DY-T1-E3-VISHAY

      		 MOSFET N-CH 100V 6.8A 8-SOIC
      SI4100DY-T1-GE3

      Mfr.#: SI4100DY-T1-GE3

      OMO.#: OMO-SI4100DY-T1-GE3-VISHAY

      		 MOSFET N-CH 100V 6.8A 8-SOIC
      SI4100DY-TI-GE3

      Mfr.#: SI4100DY-TI-GE3

      OMO.#: OMO-SI4100DY-TI-GE3-1190

      		 नयाँ र मौलिक
      SI4100DY-T1-E3-CUT TAPE

      Mfr.#: SI4100DY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4100DY-T1-E3-CUT-TAPE-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1500
      मात्रा प्रविष्ट गर्नुहोस्:
      SI4100DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.४७
      US$ ०.४७
      10
      US$ ०.४५
      US$ ४.४८
      100
      US$ ०.४२
      US$ ४२.४२
      500
      US$ ०.४०
      US$ २००.३०
      1000
      US$ ०.३८
      US$ ३७७.००
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