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AOTS40B65H1

AOTS40B65H1
Mfr. #:
AOTS40B65H1
निर्माता:
Alpha & Omega Semiconductor Inc
विवरण:
IGBT 650V 40A TO220
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
AOTS40B65H1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOTS40B65H1 DatasheetAOTS40B65H1 Datasheet (P4-P6)AOTS40B65H1 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
अल्फा र ओमेगा सेमीकन्डक्टर इंक।
उत्पादन कोटि
IGBTs - एकल
शृङ्खला
अल्फा IGBT
प्याकेजिङ
ट्यूब
प्याकेज-केस
TO-220-3
इनपुट-प्रकार
मानक
माउन्टिङ-प्रकार
प्वाल मार्फत
आपूर्तिकर्ता-उपकरण-प्याकेज
TO-220
पावर-अधिकतम
300W
उल्टो-रिकभरी-समय-trr
-
वर्तमान-कलेक्टर-आईसी-मैक्स
80A
भोल्टेज-कलेक्टर-एमिटर-ब्रेकडाउन-अधिकतम
650V
IGBT-प्रकार
-
वर्तमान-कलेक्टर-स्पंद-आईसीएम
120A
Vce-on-Max-Vge-Ic
2.4V @ 15V, 40A
स्विचिङ-ऊर्जा
1.27mJ (on), 460μJ (off)
गेट चार्ज
63nC
Td-on-off-25°C
41ns/130ns
परीक्षण अवस्था
400V, 40A, 7.5 Ohm, 15V
Tags
AOTS, AOT
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
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Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(3+Tab) TO-220AB Tube
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Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ark
IGBT, SINGLE, 600V, 80A, TO-220AB; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:283W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 30A 31000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 15 A low loss
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
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Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3
***ineon SCT
650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes
***ineon SCT
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using innovative field stop IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for IPL (Intense Pulsed Light).
भाग # Mfg। विवरण स्टक मूल्य
AOTS40B65H1
DISTI # 785-1774-ND		Alpha & Omega SemiconductorIGBT 650V 40A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		532In Stock
  • 5000:$1.0850
  • 3000:$1.0986
  • 1000:$1.1799
  • 500:$1.4241
  • 250:$1.6275
  • 100:$1.8309
  • 25:$2.0344
  • 10:$2.2790
  • 1:$2.5200
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
AOTS40B65H1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.६३
US$ १.६३
10
US$ १.५५
US$ १५.४६
100
US$ १.४६
US$ १४६.४८
500
US$ १.३८
US$ ६९१.७०
1000
US$ १.३०
US$ १ ३०२.००
बाट सुरु गर्नुहोस्
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