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NDS8947

NDS8947
Mfr. #:
NDS8947
निर्माता:
ON Semiconductor
विवरण:
MOSFET 2P-CH 30V 4A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NDS8947 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
फेयरचाइल्ड सेमीकन्डक्टर
उत्पादन कोटि
FETs - arrays
शृङ्खला
-
प्याकेजिङ
Digi-ReelR
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
FET-प्रकार
2 P-Channel (Dual)
पावर-अधिकतम
900mW
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
690pF @ 15V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
4A
Rds-on-max-Id-Vgs
65 mOhm @ 4A, 10V
Vgs-th-max-Id
2.8V @ 250μA
गेट-चार्ज-Qg-Vgs
30nC @ 10V
Tags
NDS89, NDS8, NDS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R
***i-Key
MOSFET 2P-CH 30V 4A 8-SOIC
***ser
MOSFETs Dual P-Ch FET Enhancement Mode
***et
-30V DMOS P-CHNL DUAL SO8
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:PP; Voltage, Vds Typ:-30V; Current, Id Cont:4A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.6V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:15A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:NDS8947; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm
***ment14 APAC
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:15A; Row Pitch:6.3mm; SMD Marking:NDS8947; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
भाग # Mfg। विवरण स्टक मूल्य
NDS8947
DISTI # NDS8947TR-ND		ON SemiconductorMOSFET 2P-CH 30V 4A 8-SOIC
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NDS8947
    DISTI # NDS8947CT-ND    		ON SemiconductorMOSFET 2P-CH 30V 4A 8-SOIC
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NDS8947
      DISTI # NDS8947DKR-ND      		ON SemiconductorMOSFET 2P-CH 30V 4A 8-SOIC
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NDS8947
        DISTI # NDS8947        		ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R - Bulk (Alt: NDS8947)
        RoHS: Compliant
        Min Qty: 343
        Container: Bulk        		Americas - 0
        • 3430:$0.9009
        • 1715:$0.9239
        • 1029:$0.9349
        • 686:$0.9479
        • 343:$0.9539
        NDS8947Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		7699
        • 1000:$0.9600
        • 500:$1.0100
        • 100:$1.0500
        • 25:$1.1000
        • 1:$1.1800
        NDS8947Fairchild Semiconductor Corporation0.065 ohm, 2 CHANNEL, Si, POWER, FET10
        • 11:$0.9800
        • 4:$1.4700
        • 1:$1.9600
        NDS8947Fairchild Semiconductor Corporation0.065 ohm, 2 CHANNEL, Si, POWER, FET1256
        • 801:$0.8750
        • 161:$1.0000
        • 1:$2.5000
        NDS8947Freescale Semiconductor0.065 ohm, 2 CHANNEL, Si, POWER, FET13
        • 12:$1.8750
        • 3:$2.2500
        • 1:$3.0000
        NDS8947Fairchild Semiconductor Corporation 7517
        • 3:$2.2500
        • 10:$1.6875
        • 31:$1.4062
        • 108:$0.8438
        • 357:$0.7875
        • 954:$0.7425
        NDS8947
        DISTI # 9844880        		ON SemiconductorMOSFET, DUAL, PP, LOGIC, SO-8
        RoHS: Compliant        		0
        • 1000:$1.1800
        • 500:$1.2500
        • 250:$1.5000
        • 100:$1.7800
        • 25:$2.4600
        • 1:$2.9400
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        		 नयाँ र मौलिक
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        Mfr.#: NDS9952AHD

        OMO.#: OMO-NDS9952AHD-1190

        		 नयाँ र मौलिक
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        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        5000
        मात्रा प्रविष्ट गर्नुहोस्:
        NDS8947 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ १.११
        US$ १.११
        10
        US$ १.०६
        US$ १०.५८
        100
        US$ १.००
        US$ १००.२४
        500
        US$ ०.९५
        US$ ४७३.३५
        1000
        US$ ०.८९
        US$ ८९१.००
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