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T1G4012036-FS

T1G4012036-FS
Mfr. #:
T1G4012036-FS
निर्माता:
Qorvo
विवरण:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
T1G4012036-FS डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
T1G4012036-FS थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
कोर्भो
उत्पादन कोटि:
आरएफ JFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर प्रकार:
pHEMT
प्रविधि:
GaAs
पाउनु:
10.4 dB
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
12 V
Vgs - गेट-स्रोत ब्रेकडाउन भोल्टेज:
- 7 V
आईडी - निरन्तर ड्रेन वर्तमान:
517 mA
न्यूनतम परिचालन तापमान:
- 65 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
5.6 W
माउन्टिङ शैली:
SMD/SMT
प्याकेजिङ:
जेल प्याक
कन्फिगरेसन:
दोहोरो
सञ्चालन आवृत्ति:
20 GHz
सञ्चालन तापमान दायरा:
- 65 C to + 150 C
उत्पादन:
RF JFET
प्रकार:
GaAs pHEMT
ब्रान्ड:
कोर्भो
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
619 mS
च्यानलहरूको संख्या:
2 Channel
P1dB - कम्प्रेसन बिन्दु:
32.5 dBm
उत्पादन प्रकार:
आरएफ JFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
100
उपश्रेणी:
ट्रान्जिस्टरहरू
भाग # उपनाम:
1098617
Tags
T1G4012036-F, T1G401, T1G4, T1G
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
भाग # Mfg। विवरण स्टक मूल्य
T1G4012036-FS
DISTI # 772-T1G4012036-FS		QorvoRF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
RoHS: Compliant		0
  • 25:$316.7800
छवि भाग # विवरण
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL-318

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS-318

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS-EVB1

Mfr.#: T1G4012036-FS-EVB1

OMO.#: OMO-T1G4012036-FS-EVB1-1190

 नयाँ र मौलिक
T1G4012036-XCC-1-FS

Mfr.#: T1G4012036-XCC-1-FS

OMO.#: OMO-T1G4012036-XCC-1-FS-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
T1G4012036-FS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
25
US$ ३१६.७८
US$ ७ ९१९.५०
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