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C2M0160120D

C2M0160120D
Mfr. #:
C2M0160120D
निर्माता:
N/A
विवरण:
MOSFET N-CH 1200V 19A TO-247
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
C2M0160120D डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
C2M0160120D थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
क्री
उत्पादन कोटि
FETs - एकल
शृङ्खला
Z-FET
प्याकेजिङ
ट्यूब
एकाइ - वजन
1.340411 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
TO-247-3
प्रविधि
SiC
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
प्वाल मार्फत
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
TO-247-3
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
125W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
1200V (1.2kV)
इनपुट-Capacitance-Ciss-Vds
527pF @ 800V
FET - सुविधा
सिलिकन कार्बाइड (SiC)
वर्तमान-निरन्तर-नाली-Id-25°C
17.7A (Tc)
Rds-on-max-Id-Vgs
196 mOhm @ 10A, 20V
Vgs-th-max-Id
2.5V @ 500μA
गेट-चार्ज-Qg-Vgs
32.6nC @ 20V
Pd-शक्ति-डिसिपेशन
125 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
7 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
- 10 V + 25 V
आईडी-निरन्तर-नाली-वर्तमान
17.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
1200 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
2.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
160 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
13 ns
सामान्य-टर्न-अन-डिले-समय
7 ns
Qg-गेट-चार्ज
32.6 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
4.1 S
च्यानल-मोड
वृद्धि
Tags
C2M0, C2M
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 19A 3-Pin(3+Tab) TO-247
***p One Stop Global
Trans MOSFET N-CH 12V 17.7A 3-Pin(3+Tab) TO-247
***ark
SIC MOSFET, N CHANNEL, 1.2KV, 17.7A, TO-247-3
***ment14 APAC
SIC MOSFET, N-CH, 1.2KV, 17.7A, TO-247-3
***Components
N-CHANNEL SIC MOSFET 1.2KV 19A TO247
***i-Key
MOSFET N-CH 1200V 17.7A TO-247
***hardson RFPD
SILICON CARBIDE POWER TRANSISTORS/MODULES
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
भाग # Mfg। विवरण स्टक मूल्य
C2M0160120D
DISTI # V99:2348_06265416		Cree, Inc.Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247
RoHS: Compliant		600
  • 1:$8.2769
C2M0160120D
DISTI # C2M0160120D-ND		WolfspeedMOSFET N-CH 1200V 19A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		5462In Stock
  • 1:$8.7500
C2M0160120D
DISTI # 31274971		Cree, Inc.Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247
RoHS: Compliant		600
  • 1:$8.2769
C2M0160120D
DISTI # 98Y6012		WolfspeedMOSFET, N-CH, 1.2KV, 19A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V,Power , RoHS Compliant: Yes840
  • 1:$9.2300
C2M0160120D
DISTI # 08X3830		WolfspeedSIC MOSFET, N CHANNEL, 1.2KV, 17.7A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17.7A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes600
  • 1:$9.2300
C2M0160120D
DISTI # 941-C2M0160120D		Cree, Inc.MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
RoHS: Compliant		1884
  • 1:$8.3300
C2M0160120D
DISTI # 9047348		Cree, Inc.N-CHANNEL SIC MOSFET 1.2KV 19A TO247, EA65
  • 1:£6.5300
  • 5:£6.3300
  • 10:£6.2000
  • 30:£6.0800
  • 60:£5.9600
C2M0160120D
DISTI # 9047348P		Cree, Inc.N-CHANNEL SIC MOSFET 1.2KV 19A TO247, TU636
  • 5:£6.3300
  • 10:£6.2000
  • 30:£6.0800
  • 60:£5.9600
C2M0160120D
DISTI # C2M0160120D		WolfspeedTransistor: N-MOSFET,SiC,unipolar,1.2kV,17.7A,125W,TO247-36
  • 1:$15.8700
  • 3:$13.4200
  • 10:$10.6000
  • 30:$9.8700
C2M0160120D
DISTI # C2M0160120D		WolfspeedSILICON CARBIDE POWER TRANSISTORS/MODULES
RoHS: Compliant		115107
  • 1:$7.4900
  • 50:$7.2500
C2M0160120D
DISTI # 2630830		WolfspeedMOSFET, N-CH, 1.2KV, 19A, TO-247
RoHS: Compliant		866
  • 1:£7.1200
  • 5:£6.5500
  • 10:£6.4200
  • 50:£6.3600
  • 100:£6.3500
C2M0160120D
DISTI # 2630830		WolfspeedMOSFET, N-CH, 1.2KV, 19A, TO-247
RoHS: Compliant		840
  • 1:$13.5300
छवि भाग # विवरण
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D

 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
C2M0160120

Mfr.#: C2M0160120

OMO.#: OMO-C2M0160120-1190

 नयाँ र मौलिक
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D-WOLFSPEED

 MOSFET N-CH 1200V 19A TO-247
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
C2M0160120D को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १०.८८
US$ १०.८८
10
US$ १०.३३
US$ १०३.३१
100
US$ ९.७९
US$ ९७८.७५
500
US$ ९.२४
US$ ४ ६२१.९०
1000
US$ ८.७०
US$ ८ ७००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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