SIA430DJ-T1-GE3

Mfr. #:: SIA430DJ-T1-GE3
निर्माता:: Vishay
विवरण:: MOSFET N-CH 20V 12A SC70-6
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIA430DJ-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIA430DJ-T1-GE3 Datasheet SIA430DJ-T1-GE3 Datasheet (P4-P6)SIA430DJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - एकल

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SIA430DJ-GE3

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: PowerPAKR SC-70-6

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 1 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: PowerPAKR SC-70-6 Single

कन्फिगरेसन: एकल क्वाड ड्रेन दोहोरो स्रोत

FET-प्रकार: MOSFET एन-च्यानल, धातु अक्साइड

पावर-अधिकतम: 19.2W

ट्रान्जिस्टर-प्रकार: 1 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 20V

इनपुट-Capacitance-Ciss-Vds: 800pF @ 10V

FET - सुविधा: मानक

वर्तमान-निरन्तर-नाली-Id-25°C: 12A (Tc)

Rds-on-max-Id-Vgs: 13.5 mOhm @ 7A, 10V

Vgs-th-max-Id: 3V @ 250μA

गेट-चार्ज-Qg-Vgs: 18nC @ 10V

Pd-शक्ति-डिसिपेशन: 3.5 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 10 ns 8 ns

उदय-समय: 10 ns 8 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 12 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 20 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 13.5 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 15 ns 17 ns

सामान्य-टर्न-अन-डिले-समय: 16 ns 10 ns

च्यानल-मोड: वृद्धि

Tags: SIA430DJ-T1, SIA430DJ-T, SIA430, SIA43, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA430DJ-T1-GE3 विवरण

***ure Electronics: Single N-Channel 20 V 0.0135 Ohm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L

***ical: Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R

***ronik: N-CHANNEL-FET 12A 20V PP-SC70-6 RoHSconf

***ment14 APAC: N CHANNEL MOSFET, 20V, 12A, SC-70; Trans; N CHANNEL MOSFET, 20V, 12A, SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:6

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SIA430DJ-T1-GE3 DISTI # 21308554	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2028	155:$0.1812
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call	3000:$0.4466
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIA430DJ-T1-GE3 DISTI # C1S803601470872	Vishay Intertechnologies	MOSFETs RoHS: Compliant	80	25:$0.6874 10:$0.6897
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA430DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIA430DJ-T1-GE3 DISTI # 16P3618	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 12A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:20V,On Resistance Rds(on):18.5mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:- , RoHS Compliant: Yes	2028	1:$0.3230 25:$0.3230 50:$0.3230 100:$0.3230 250:$0.3230 500:$0.3230 1000:$0.3230
SIA430DJ-T1-GE3. DISTI # 28AC2097	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0
SIA430DJ-T1-GE3 DISTI # 781-SIA430DJ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	27	1:$1.0200 10:$0.8360 100:$0.6410 500:$0.5520 1000:$0.4840
SIA430DJ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - 3000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SIA430DJT-T1-GE3 OMO.#: OMO-SIA430DJT-T1-GE3	MOSFET 20V Vds 20V Vgs Thin PowerPAK SC-70
	Mfr.#: SIA430DJT-T4-GE3 OMO.#: OMO-SIA430DJT-T4-GE3	MOSFET 20V Vds 20V Vgs PowerPAK SC-70
	Mfr.#: SIA430DJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA430DJ-T1-GE3-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: SIA430DJ OMO.#: OMO-SIA430DJ-1190	नयाँ र मौलिक
	Mfr.#: SIA430DJ-T1-GE3 OMO.#: OMO-SIA430DJ-T1-GE3-VISHAY	MOSFET N-CH 20V 12A SC70-6
	Mfr.#: SIA430DJ-T1-GE3-CUTTAPE OMO.#: OMO-SIA430DJ-T1-GE3-CUTTAPE-1190	नयाँ र मौलिक
	Mfr.#: SIA430DJ-T4-GE3 OMO.#: OMO-SIA430DJ-T4-GE3-VISHAY	MOSFET N-CH 20V SC-70-6
	Mfr.#: SIA430DJT-T1-GE3 OMO.#: OMO-SIA430DJT-T1-GE3-VISHAY	MOSFET N-CH 20V 12A SC70-6
	Mfr.#: SIA430DJT-T4-GE3 OMO.#: OMO-SIA430DJT-T4-GE3-VISHAY	MOSFET N-CH 20V 12A SC-70-6

उपलब्धता

स्टक:: Available
अर्डर मा:: 3000
मात्रा प्रविष्ट गर्नुहोस्:

SIA430DJ-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.५०~~; ~~US$ ०.५०~~

10: ~~US$ ०.४८~~; ~~US$ ४.७६~~

100: ~~US$ ०.४५~~; ~~US$ ४५.०९~~

500: ~~US$ ०.४३~~; ~~US$ २१२.९५~~

1000: ~~US$ ०.४०~~; ~~US$ ४००.८०~~

बाट सुरु गर्नुहोस्

SIA430DJ-T1 3
SIA430DJ-T 4
SIA430 7
SIA43 28
SIA4 136
SIA 347

SIA430DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes