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SI8808DB-T2-E1

SI8808DB-T2-E1
Mfr. #:
SI8808DB-T2-E1
निर्माता:
Vishay
विवरण:
MOSFET N-CH 30V MICROFOOT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI8808DB-T2-E1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI8808DB-T2-E1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
माइक्रो फुट
प्याकेज-केस
4-UFBGA
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
4-Microfoot
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
500mW
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
330pF @ 15V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
-
Rds-on-max-Id-Vgs
95 mOhm @ 1A, 4.5V
Vgs-th-max-Id
900mV @ 250μA
गेट-चार्ज-Qg-Vgs
10nC @ 8V
Pd-शक्ति-डिसिपेशन
900 mW
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
2.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
0.9 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
95 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Qg-गेट-चार्ज
3.7 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
10 S
Tags
SI880, Si88, SI8
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R
***et
N-CHANNEL 30 V (D-S) MOSFET
***
N-CHANNEL 8-V (D-S) MOSFET
***i-Key
MOSFET N-CH 30V MICROFOOT
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.071Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:900Mv; Power Dissipation Pd:900Mw; No. Of Pins:4Pins Rohs Compliant: No
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI8808DB-T2-E1
DISTI # V72:2272_09216536		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant		5955
  • 3000:$0.1448
  • 1000:$0.1577
  • 500:$0.2033
  • 250:$0.2384
  • 100:$0.2480
  • 25:$0.3001
  • 10:$0.3335
  • 1:$0.4370
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		22093In Stock
  • 1000:$0.1872
  • 500:$0.2423
  • 100:$0.3304
  • 10:$0.4410
  • 1:$0.5200
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		22093In Stock
  • 1000:$0.1872
  • 500:$0.2423
  • 100:$0.3304
  • 10:$0.4410
  • 1:$0.5200
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		21000In Stock
  • 3000:$0.1657
SI8808DB-T2-E1
DISTI # 25790129		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant		5955
  • 3000:$0.1448
  • 1000:$0.1577
  • 500:$0.2033
  • 250:$0.2384
  • 100:$0.2480
  • 51:$0.3001
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8808DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 6000
  • 3000:$0.1949
  • 6000:$0.1939
  • 12000:$0.1939
  • 18000:$0.1929
  • 30000:$0.1929
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R (Alt: SI8808DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.2329
  • 6000:€0.1589
  • 12000:€0.1369
  • 18000:€0.1259
  • 30000:€0.1169
SI8808DB-T2-E1.
DISTI # 28AC2185		Vishay IntertechnologiesN-CHANNEL 30 V (D-S) MOSFET , ROHS COMPLIANT: NO6000
  • 1:$0.1620
  • 3000:$0.1620
SI8808DB-T2-E1
DISTI # 78-SI8808DB-T2-E1		Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
RoHS: Compliant		3856
  • 1:$0.4600
  • 10:$0.3510
  • 100:$0.2610
  • 500:$0.2140
  • 1000:$0.1660
  • 3000:$0.1620
SI8808DBT2E1Vishay Intertechnologies 
RoHS: Compliant		Europe - 3000
    SI8808DB-T2-E1
    DISTI # C1S803602004241    		Vishay IntertechnologiesMOSFETs5955
    • 100:$0.2480
    • 50:$0.2949
    • 25:$0.3277
    • 10:$0.3335
    SI8808DB-T2-E1Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant    		Americas -
      छवि भाग # विवरण
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1

      		 MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1-VISHAY

      		 MOSFET N-CH 30V MICROFOOT
      SI8808DBT2E1

      Mfr.#: SI8808DBT2E1

      OMO.#: OMO-SI8808DBT2E1-1190

      		 Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3000
      मात्रा प्रविष्ट गर्नुहोस्:
      SI8808DB-T2-E1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.२४
      US$ ०.२४
      10
      US$ ०.२३
      US$ २.३१
      100
      US$ ०.२२
      US$ २१.८७
      500
      US$ ०.२१
      US$ १०३.३०
      1000
      US$ ०.१९
      US$ १९४.४०
      बाट सुरु गर्नुहोस्
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