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S25FL256SAGBHI313

S25FL256SAGBHI313
Mfr. #:
S25FL256SAGBHI313
निर्माता:
Cypress Semiconductor
विवरण:
IC FLASH 256M SPI 133MHZ 24BGA FL-S
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
S25FL256SAGBHI313 डाटा पाना
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S25FL256SAGBHI313 थप जानकारी S25FL256SAGBHI313 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता
साइप्रस सेमीकन्डक्टर कर्पोरेशन
उत्पादन कोटि
मेमोरी
शृङ्खला
FL-S
प्याकेजिङ
टेप र रिल (TR)
प्याकेज-केस
24-TBGA
सञ्चालन - तापक्रम
-40°C ~ 85°C (TA)
इन्टरफेस
SPI सिरियल
भोल्टेज - आपूर्ति
2.7 V ~ 3.6 V
आपूर्तिकर्ता-उपकरण-प्याकेज
24-BGA (6x8)
मेमोरी साइज
256M (32M x 8)
मेमोरी-प्रकार
फ्ल्यास - होइन
गति
133MHz
ढाँचा- मेमोरी
फ्ल्यास
Tags
S25FL256SAGBHI3, S25FL256SAGBHI, S25FL256SAGB, S25FL256SAG, S25FL256SA, S25FL256S, S25FL25, S25FL2, S25FL, S25F, S25
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
256-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (S
***i-Key
IC FLASH 256M SPI 133MHZ 24BGA
***ark
TAPE AND REEL / 256-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAC024 IN T&R PACKING
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
भाग # Mfg। विवरण स्टक मूल्य
S25FL256SAGBHI313
DISTI # S25FL256SAGBHI313-ND		Cypress SemiconductorIC FLASH 256M SPI 133MHZ 24BGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$3.3084
S25FL256SAGBHI313
DISTI # 727-25FL256SAGBHI313		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 2500:$2.8900
छवि भाग # विवरण
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Mfr.#: S25FL256SAGBHI203

OMO.#: OMO-S25FL256SAGBHI203

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OMO.#: OMO-S25FL256SAGMFI011

 NOR Flash 256Mb 3V 133MHz Serial NOR Flash
S25FL256LAGMFV001

Mfr.#: S25FL256LAGMFV001

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 NOR Flash Nor
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Mfr.#: S25FL256LDPNFI011

OMO.#: OMO-S25FL256LDPNFI011-CYPRESS-SEMICONDUCTOR

 NOR Flash Serial-SPI 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tube
S25FL256LDPNFV011

Mfr.#: S25FL256LDPNFV011

OMO.#: OMO-S25FL256LDPNFV011-CYPRESS-SEMICONDUCTOR

 NOR Flash Serial-SPI 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tube
S25FL256SDPMFV000

Mfr.#: S25FL256SDPMFV000

OMO.#: OMO-S25FL256SDPMFV000-CYPRESS-SEMICONDUCTOR

 Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 66-MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TRAY PACKING)
S25FL256SAGBHIC03

Mfr.#: S25FL256SAGBHIC03

OMO.#: OMO-S25FL256SAGBHIC03-CYPRESS-SEMICONDUCTOR

 IC FLASH 256M SPI 133MHZ 24BGA FL-S
S25FL256POXMF

Mfr.#: S25FL256POXMF

OMO.#: OMO-S25FL256POXMF-1190

 नयाँ र मौलिक
S25FL256SAIF

Mfr.#: S25FL256SAIF

OMO.#: OMO-S25FL256SAIF-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
S25FL256SAGBHI313 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४.३४
US$ ४.३४
10
US$ ४.१२
US$ ४१.१८
100
US$ ३.९०
US$ ३९०.१५
500
US$ ३.६८
US$ १ ८४२.४०
1000
US$ ३.४७
US$ ३ ४६८.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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