HB2 Series 650 V IGBT

By STMicroelectronics 114

HB2 Series 650 V IGBT

STMicroelectronics' IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

  • Maximum junction temperature: TJ = 175°C
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
  • Co-packaged protection diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient

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