SiC Schottky Barrier Diodes

By ROHM Semiconductor 154

SiC Schottky Barrier Diodes

ROHM offers silicon carbide (SiC) Schottky barrier diodes in a variety of current ratings and packages. Some features include low forward voltage drop, high peak current (IFSM) ratings, and low leakage. They are available with one or two diodes per package, and some AEC-Q101 qualified models are available for automotive use. The reverse recovery time (trr) is virtually constant, regardless of temperature (due primarily to device capacitance). It delivers much lower switching loss than silicon fast recovery diodes (SiFRDs).

  • Ultra-fast recovery time
  • Maximum junction temperature: 175°C
  • Packaged devices rated for 650 V or 1200 V
  • Bare dies available up to 1700 V
  • SPICE and thermal models available
  • Continuous forward current ratings of 2 A, 4 A, 5 A, 6 A, 8 A, 10 A, 12 A, 15 A, 20 A, 30 A, and 40 A
  • 3rd generation with low VF
  • Operating temperature range: -40°C to +175°C
  • Power factor correction circuits
  • Secondary rectifiers
  • Automotive electronics